Datasheet > 61LV51216

61LV51216

更新时间： 2024-01-05 14:23:03

品牌	Logo	应用领域
美国芯成 - ISSI		/
页数	文件大小	规格书
15页	100K
描述
512K x 16 HIGH SPEED ASYNCHRONOUS

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61LV51216 数据手册

IS61LV51216

ISSI

512K x 16 HIGH SPEED ASYNCHRONOUS

CMOS STATIC RAM WITH 3.3V SUPPLY

MARCH 2005

FEATURES

DESCRIPTION

The ISSI IS61LV51216 is a high-speed, 8M-bit static RAM

organized as 525,288 words by 16 bits. It is fabricated using

ISSI'shigh-performanceCMOStechnology.Thishighlyreliable

process coupled with innovative circuit design techniques,

yields high-performance and low power consumption devices.

• High-speed access time:

— 8, 10, and 12 ns

• CMOS low power operation

• Low stand-by power:

— Less than 5 mA (typ.) CMOS stand-by

When CE is HIGH (deselected), the device assumes a standby

mode at which the power dissipation can be reduced down with

CMOS input levels.

• TTL compatible interface levels

• Single 3.3V power supply

• Fully static operation: no clock or refresh

required

Easy memory expansion is provided by using Chip Enable and

OutputEnableinputs,CEandOE.TheactiveLOWWriteEnable

(WE) controls both writing and reading of the memory. A data

byte allows Upper Byte (UB) and Lower Byte (LB) access.

• Three state outputs

• Data control for upper and lower bytes

• Industrial temperature available

• Lead-free available

The IS61LV51216 is packaged in the JEDEC standard

44-pin TSOP Type II and 48-pin Mini BGA (9mm x 11mm).

FUNCTIONAL BLOCK DIAGRAM

512K x 16

MEMORY ARRAY

A0-A18

DECODER

VDD

GND

I/O0-I/O7

Lower Byte

I/O

DATA

COLUMN I/O

CIRCUIT

I/O8-I/O15

Upper Byte

CONTROL

CIRCUIT

without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to

obtain the latest version of this device specification before relying on any published information and before placing orders for products.

Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774

Rev. B

03/10/05

12 3 4 5 6 7...15

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