Datasheet > 6116

6116

更新时间： 2023-12-20 18:45:05

品牌	Logo	应用领域
瑞萨 - RENESAS		/
页数	文件大小	规格书
13页	221K
描述
5.0V 2K x 8 Asynchronous Static RAM

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6116 数据手册

6116SA/LA

CMOS Static RAM 2K (16K x 8-Bit)

Military, Commercial, and Industrial Temperature Ranges

PinConfigurations⁽¹⁾

Capacitance (TA = +25°C, f = 1.0 MHZ)

Symbol

Parameter⁽¹⁾

Input Capacitance

I/O Capacitance

Conditions

IN = 0V

OUT = 0V

Max.

Unit

CI/O

PTG24

CD24

SD24

PSG24

3089 tbl 03

NOTE:

1. This parameter is determined by device characterization, but is not production

tested.

I/O

GND

AbsoluteMaximumRatings⁽¹⁾

3089 drw 02

Symbol

Rating

Com'l.

Mil.

Unit

DIP/SOIC

Top View

(2)

TERM

Terminal Voltage

with Respect

to GND

-0.5 to +7.0

Operating

0 to +70

-55 to +125

-65 to +135

^oC

Temperature

NOTE:

1. This text does not indicate orientation of actual part-marking.

Temperature

Under Bias

-55 to +125

TBIAS

STG

Storage Temperature -55 to +125

-65 to +150

^oC

Power Dissipation

DC Output Current

1.0

PinDescription

Name

Description

Address Inputs

Data Input/Output

Chip Select

Write Enable

Output Enable

Power

IOUT

3089 tbl 04

A0 - A10

NOTES:

1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS

may cause permanent damage to the device. This is a stress rating only and

functional operation of the device at these or any other conditions above those

indicated in the operational sections of this specification is not implied. Exposure

to absolute maximum rating conditions for extended periods may affect

reliability.

I/O0

- I/O

2. VTERM must not exceed VCC +0.5V.

GND

Ground

3089 tbl 01

TruthTable⁽¹⁾

Mode

Standby

Read

I/O

High-Z

DATAOUT

High-Z

Read

Write

DATAIN

3089 tbl 02

NOTE:

1. H = VIH, L = VIL, X = Don't Care.

Jul.17.20

123 4 5 6 7...13

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