Datasheet > 6116

6116

更新时间： 2023-12-20 18:45:05

品牌	Logo	应用领域
瑞萨 - RENESAS		/
页数	文件大小	规格书
13页	221K
描述
5.0V 2K x 8 Asynchronous Static RAM

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数据手册

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6116 数据手册

6116SA/LA

CMOS Static RAM 2K (16K x 8-Bit)

Military, Commercial, and Industrial Temperature Ranges

Timing Waveform of Read Cycle No. 1^(1,3)

tRC

ADDRESS

tAA

tOH

(5)

tOE

tOHZ

(5)

tOLZ

(5)

ACS

tCHZ

(5)

CLZ

DATA

VALID

DATAOUT

tPU

ICC

Supply

Currents

ISB

tPD

3089 drw 06

Timing Waveform of Read Cycle No. 2^(1,2,4)

tRC

ADDRESS

tAA

tOH

DATA VALID

DATAOUT

PREVIOUS DATA VALID

3089 drw 07

Timing Waveform of Read Cycle No. 3^(1,3,4)

(5)

ACS

tCHZ

(5)

CLZ

DATAOUT

DATA VALID

3089 drw 08

NOTES:

1. WE is HIGH for Read cycle.

2. Device is continuously selected, CS is LOW.

3. Address valid prior to or coincident with CS transition LOW.

4. OE is LOW.

5. Transition is measured ±500mV from steady state.

6.42

Jul.17.20

1...4 5 678 9 10...13

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