Datasheet > 5STP45N2200

5STP45N2200

更新时间： 2022-04-23 23:00:11

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页数	文件大小	规格书
6页	314K
描述
Phase Control Thyristor

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中文翻译

获取价格

数据手册

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5STP45N2200 数据手册

5STP 45N2800

On-state

Maximum rated values ¹⁾

Parameter

Symbol Conditions

min

typ

max

5080

Unit

Max. average on-state

I_TAVM

Half sine wave, T_c= 70°C

current

RMS on-state current

I_TRMS

I_TSM

7970

75000

Max. peak non-repetitive

tp = 10 ms, Tj = 125°C,

V_D=V_R= 0 V

surge current

Limiting load integral

I²t

I_TSM

28125

79000

kA²s

Max. peak non-repetitive

tp = 8.3 ms, Tj = 125°C,

V_D=V_R=0 V

surge current

Limiting load integral

Characteristic values

Parameter

On-state voltage

Threshold voltage

Slope resistance

Holding current

I²t

25900

kA²s

Symbol Conditions

min

typ

max

1.29

0.86

0.07

100

Unit

V_T

V_T0

r_T

I_T= 6000 A, T_j= 125°C

I_T= 3000 A - 9000 A, T_j= 125°C

Tj = 125°C

T_j= 25°C

T_j= 125°C

mΩ

I_H

Latching current

I_L

T_j= 25°C

T_j= 125°C

500

350

Switching

Maximum rated values ¹⁾

Parameter

Symbol Conditions

min

typ

max

250

Unit

Critical rate of rise of on-

di/dt_crit

Cont.

f = 50 Hz

Cont.

A/µs

µs

state current

T_j= 125°C, I_TRM= 3000 A,

V_D≤ 0.67⋅V_DRM

Critical rate of rise of on-

state current

di/dt_crit

1000

I_FG= 2 A, t_r= 0.5 µs

f = 1Hz

Circuit-commutated turn-off t_q

time

T_j= 125°C, I_TRM= 3000 A,

V_R= 200 V, di_T/dt = -5 A/µs,

400

V_D≤ 0.67⋅V_DRM, dv_D/dt = 20 V/µs,

Characteristic values

Parameter

Recovery charge

Symbol Conditions

min

4200

max

6500

Unit

µAs

Q_rr

T_j= 125°C, I_TRM= 3000 A,

V_R= 200 V, di_T/dt = -5 A/µs

Delay time

t_d

µs

V_D= 0.4⋅V_DRM, I_FG= 2 A, t_r= 0.5 µs

ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.

Doc. No. 5SYA1007-03 Jan. 02

page 2 of 6

123 4 5 6

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