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5STP45Q2600 PDF预览

5STP45Q2600

更新时间: 2024-01-28 14:03:11
品牌 Logo 应用领域
ABB 栅极局域网
页数 文件大小 规格书
6页 227K
描述
Phase Control Thyristor

5STP45Q2600 技术参数

生命周期:ActiveReach Compliance Code:compliant
风险等级:5.75Is Samacsys:N
关态电压最小值的临界上升速率:1000 V/us最大直流栅极触发电流:400 mA
最大直流栅极触发电压:2.6 V最大维持电流:100 mA
通态非重复峰值电流:75000 A最大通态电压:1.29 V
最大通态电流:5490000 A最高工作温度:125 °C
断态重复峰值电压:2600 V子类别:Silicon Controlled Rectifiers
表面贴装:YES触发设备类型:SCR
Base Number Matches:1

5STP45Q2600 数据手册

 浏览型号5STP45Q2600的Datasheet PDF文件第2页浏览型号5STP45Q2600的Datasheet PDF文件第3页浏览型号5STP45Q2600的Datasheet PDF文件第4页浏览型号5STP45Q2600的Datasheet PDF文件第5页浏览型号5STP45Q2600的Datasheet PDF文件第6页 
VDSM  
ITAVM  
ITRMS  
ITSM  
VT0  
=
=
=
2800 V  
5490 A  
8625 A  
Phase Control Thyristor  
= 75000 A  
5STP 45Q2800  
=
=
0.86 V  
0.070  
rT  
mW  
Doc. No. 5SYA1050-01 Sep.00  
· Patented free-floating silicon technology  
· Low on-state and switching losses  
· Designed for traction, energy and industrial applications  
· Optimum power handling capability  
· Interdigitated amplifying gate.  
Blocking  
Conditions  
Part Number  
5STP 45Q2800  
5STP 45Q2600  
5STP 45Q2200  
VDRM  
VRSM1  
IDRM  
VRRM  
2800 V  
3000 V  
2600 V  
2800 V  
2200 V  
2400 V  
f = 50 Hz, tp = 10ms  
tp = 5 ms, single pulse  
VDRM  
£ 400 mA  
£ 400 mA  
1000 V/µs  
IRRM  
VRRM  
@ Exp. to 0.67xVDRM  
Tj = 125°C  
dV/dtcrit  
Mechanical data  
FM  
Mounting force  
nom.  
min.  
90 kN  
81 kN  
max.  
108 kN  
a
Acceleration  
Device unclamped  
Device clamped  
Weight  
50 m/s2  
100 m/s2  
2.1 kg  
m
DS  
Da  
Surface creepage distance  
Air strike distance  
36 mm  
15 mm  
ABB Semiconductors AG reserves the right to change specifications without notice.  

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