Datasheet > 5SHX04D4502

5SHX04D4502

更新时间： 2024-09-23 03:04:35

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ABB		栅
页数	文件大小	规格书
9页	150K
描述
Reverse Conducting Integrated Gate-Commutated Thyristor

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技术参数
数据手册

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5SHX04D4502 技术参数

生命周期：	Active	Reach Compliance Code：	compliant
风险等级：	5.62	Is Samacsys：	N
Base Number Matches：	1

5SHX04D4502 数据手册

V_DRM

I_TGQM

I_TSM

4500 V

340 A

2.1 kA

1.8 V

mΩ

2800 V

Reverse Conducting Integrated

Gate-Commutated Thyristor

V_T0

5SHX 04D4502

r_T

V_DClink

4.7

Doc. No. 5SYA1224-03 Jan. 02

• Direct fiber optic control

• Fast response (t_don< 3 µs, t_doff< 6 µs)

• Precise timing (∆t_doff< 800 ns)

• Patented free floating silicon technology

• Optimized low on-state and switching losses

• Very high EMI immunity

• Cosmic radiation withstand rating

Blocking

V_DRM

I_DRM

Repetitive peak off-state voltage

Repetitive peak off-state current

4500 V

20 mA V_D= V_DRM

V_GR≥ 2V

≤

V_GR≥ 2V

Permanent DC voltage for 100

0 ≤ T_j≤ 115 °C. Ambient cosmic

V_DClink

2800 V

FIT failure rate

radiation at sea level in open air.

Mechanical data (see Fig. 9)

min.

max.

10 kN

14 kN

F_m

Mounting force

D_p

D_s

D_a

Pole-piece diameter

Housing thickness

Weight IGCT

Surface creepage distance

Air strike distance

Length IGCT

34 mm

26 mm

0.55 kg

33 mm

13 mm

202.5 mm

46.5 mm

200 mm

±0.1 mm

±0.5 mm

≥

+0/-0.5 mm

±1.0 mm

+0/-0.5 mm

Height IGCT

Width IGCT

ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.

12 3 4 5 6 7...9

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