Datasheet > 5SHX26L4510

5SHX26L4510

更新时间： 2022-04-23 23:00:11

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ABB		栅
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13页	730K
描述
Reverse Conducting Integrated Gate-Commutated Thyristor

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数据手册

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5SHX26L4510 数据手册

V_DRM

I_TGQM

I_TSM

4500 V

2200 A

17×10³A

1.8 V

Reverse Conducting Integrated

Gate-Commutated Thyristor

V_(T0)

r_T

5SHX 26L4510

0.533

V_DC-link

2800 V

Doc. No. 5SYA1230-03 Aug 07

· High snubberless turn-off rating

· Optimized for medium frequency (<1 kHz) and

low turn-off losses

· High reliability

· High electromagnetic immunity

· Simple control interface with status feedback

· AC or DC supply voltage

· Contact factory for series connection

Blocking

Maximum rated values ^{Note 1}

Conditions

min

typ

max

Unit

Parameter

Symbol

Repetitive peak off-state

voltage

V_DRM

Gate Unit energized

4500

Permanent DC voltage for V_DC-link

100 FIT failure rate of

RC-GCT

Ambient cosmic radiation at sea level

in open air. Gate Unit energized

2800

Characteristic values

Conditions

max

Unit

Parameter

Symbol

Repetitive peak off-state

current

I_DRM

V_D= V_DRM, Gate Unit energized

Mechanical data (see Fig. 20, 21)

Maximum rated values ^{Note 1}

Conditions

min

typ

max

Unit

Parameter

Symbol

Mounting force

Characteristic values

Parameter

F_m

Conditions

min

typ

max

Unit

Symbol

Pole-piece diameter

D_p

± 0.1 mm

Housing thickness

Weight

25.3

25.8

2.9

Surface creepage distance D_s

Anode to Gate

± 1.0 mm

Air strike distance

Length

D_a

439

Height

± 1.0 mm

Width IGCT

± 1.0 mm

173

Note 1 Maximum rated values indicate limits beyond which damage to the device may occur

ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.

12 3 4 5 6 7...13

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