Datasheet > 5SHY42L6500

5SHY42L6500

更新时间： 2024-02-29 15:46:20

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描述
Asymmetric Integrated Gate- Commutated Thyristor

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技术参数
数据手册

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5SHY42L6500 技术参数

生命周期：	Active	Reach Compliance Code：	compliant
风险等级：	5.6	Base Number Matches：	1

5SHY42L6500 数据手册

V_DRM

I_TGQM

I_TSM

6500 V

4200 A

26×10³A

2.0 V

Asymmetric Integrated Gate-

Commutated Thyristor

V_(T0)

r_T

5SHY 42L6500

0.54

PRELIMINARY

V_DC-link

4000 V

Doc. No. 5SYA1245-00 Aug 07

· High snubberless turn-off rating

· Wide temperature range

· High electromagnetic immunity

· Simple control interface with status feedback

· AC or DC supply voltage

· Option for series connection (contact factory)

Blocking

Maximum rated values ¹⁾

Conditions

Symbol

min

typ

max

6500

4000

Unit

Parameter

Rep. peak off-state voltage V_DRM

Gate Unit energized

Permanent DC voltage for V_DC-link

100 FIT failure rate of GCT

Ambient cosmic radiation at sea level

in open air. Gate Unit energized

Reverse voltage

Characteristic values

Parameter

V_RRM

Conditions

max

Unit

Symbol

Rep. peak off-state current I_DRM

V_D= V_DRM, Gate Unit energized

Mechanical data (see Fig. 11, 12)

Maximum rated values ¹⁾

Conditions

min

typ

max

Unit

Parameter

Symbol

Mounting force

Characteristic values

Parameter

F_m

Conditions

min

typ

max

Unit

Symbol

Pole-piece diameter

D_p

± 0.1 mm

Housing thickness

Weight

25.3

25.8

2.9

Surface creepage distance D_s

Anode to Gate

± 1.0 mm

Air strike distance

Length

D_a

439

Height

± 1.0 mm

Width IGCT

± 1.0 mm

173

1) Maximum rated values indicate limits beyond which damage to the device may occur

ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.

12 3 4 5 6 7...9

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