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5SLX12M3301 PDF预览

5SLX12M3301

更新时间: 2022-04-23 23:00:11
品牌 Logo 应用领域
ABB 二极管
页数 文件大小 规格书
3页 54K
描述
Fast-Diode Die

5SLX12M3301 数据手册

 浏览型号5SLX12M3301的Datasheet PDF文件第2页浏览型号5SLX12M3301的Datasheet PDF文件第3页 
VRRM  
IF  
=
=
3300 V  
100 A  
Fast-Diode Die  
5SLX 12M3301  
x
Die size: 13.6 13.6 mm  
Doc. No. 5SYA1661-02 Feb. 05  
· Fast and soft reverse-recovery  
· Low losses  
· High SOA  
· Passivation: SIPOS Nitride plus Polyimide  
1)  
Maximum rated values  
Parameter  
Symbol Conditions  
min max Unit  
Repetitive peak reverse voltage  
Continuous forward current  
Repetitive peak forward current  
Junction temperature  
VRRM  
IF  
3300  
100  
200  
125  
V
A
IFRM  
Tvj  
Limited by Tvjmax  
A
-40  
°C  
1)  
Maximum rated values indicate limits beyond which damage to the device may occur per IEC 60747 - 2  
2)  
Diode characteristic values  
Parameter  
Symbol Conditions  
min  
Tvj = 25 °C 2.0  
Tvj = 125 °C  
Tvj = 25 °C  
Tvj = 125 °C  
Tvj = 25 °C  
Tvj = 125 °C  
Tvj = 25 °C  
Tvj = 125 °C  
Tvj = 25 °C  
Tvj = 125 °C  
Tvj = 25 °C  
Tvj = 125 °C  
typ max Unit  
2.3  
2.35  
5
2.7  
V
V
Continuous forward voltage  
VF  
IR  
IF = 100 A  
µA  
mA  
A
Continuous reverse current  
Peak reverse recovery current  
Recovered charge  
VR = 3300 V  
2.5  
115  
140  
65  
7
Irr  
A
IF = 100 A,  
µC  
µC  
ns  
ns  
mJ  
mJ  
VR = 1800 V,  
di/dt = 550 A/µs,  
Ls = 1200 nH,  
Inductive load,  
Switch:  
Qrr  
trr  
110  
470  
800  
85  
Reverse recovery time  
2x 5SMX12M3300  
Reverse recovery energy  
Erec  
145  
2)  
Characteristic values according to IEC 60747 - 2  
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.  

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