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5KP85AHE3/54 PDF预览

5KP85AHE3/54

更新时间: 2024-11-14 14:23:19
品牌 Logo 应用领域
威世 - VISHAY 局域网二极管电视
页数 文件大小 规格书
5页 90K
描述
DIODE 5000 W, UNIDIRECTIONAL, SILICON, TVS DIODE, ROHS COMPLIANT, PLASTIC, CASE P600, 2 PIN, Transient Suppressor

5KP85AHE3/54 技术参数

是否无铅:不含铅是否Rohs认证:符合
生命周期:Active包装说明:O-PALF-W2
针数:2Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.10.00.50
风险等级:5.12Is Samacsys:N
其他特性:EXCELLENT CLAMPING CAPABILITY ,HIGH RELIABILITY最大击穿电压:104 V
最小击穿电压:94.4 V击穿电压标称值:99.2 V
外壳连接:ISOLATED最大钳位电压:137 V
配置:SINGLE二极管元件材料:SILICON
二极管类型:TRANS VOLTAGE SUPPRESSOR DIODEJESD-30 代码:O-PALF-W2
JESD-609代码:e3最大非重复峰值反向功率耗散:5000 W
元件数量:1端子数量:2
最高工作温度:175 °C最低工作温度:-55 °C
封装主体材料:PLASTIC/EPOXY封装形状:ROUND
封装形式:LONG FORM峰值回流温度(摄氏度):NOT SPECIFIED
极性:UNIDIRECTIONAL最大功率耗散:8 W
认证状态:Not Qualified最大重复峰值反向电压:85 V
子类别:Transient Suppressors表面贴装:NO
技术:AVALANCHE端子面层:Matte Tin (Sn)
端子形式:WIRE端子位置:AXIAL
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

5KP85AHE3/54 数据手册

 浏览型号5KP85AHE3/54的Datasheet PDF文件第2页浏览型号5KP85AHE3/54的Datasheet PDF文件第3页浏览型号5KP85AHE3/54的Datasheet PDF文件第4页浏览型号5KP85AHE3/54的Datasheet PDF文件第5页 
5KP8.5A thru 5KP188A  
Vishay General Semiconductor  
www.vishay.com  
®
TRANSZORB Transient Voltage Suppressors  
FEATURES  
• P600 glass passivated chip junction  
• Available in uni-directional polarity only  
• 5000 W peak pulse power capability with  
a 10/1000 μs waveform, repetitive rate  
(duty cycle): 0.01 %  
• Excellent clamping capability  
• Very fast response time  
P600  
• Low incremental surge resistance  
• Solder dip 275 °C max. 10 s, per JESD 22-B106  
• AEC-Q101 qualified  
• Material categorization: for definitions of compliance  
please see www.vishay.com/doc?99912  
TYPICAL APPLICATIONS  
Use in sensitive electronics protection against voltage  
PRIMARY CHARACTERISTICS  
transients induced by inductive load switching and lighting  
on ICs, MOSFET, signal lines of sensor units for consumer,  
computer, industrial, automotive, and telecommunication.  
VWM  
8.5 V to 188 V  
9.4 V to 231 V  
5000 W  
VBR  
PPPM  
MECHANICAL DATA  
PD  
8.0 W  
Case: Molded epoxy body over passivated junction  
IFSM  
500 A  
Molding compound meets UL 94 V-0 flammability rating  
Base P/N-E3  
Base P/NHE3 - RoHS compliant, AEC-Q101 qualified  
- RoHS compliant, commercial grade  
TJ max.  
Polarity  
Package  
175 °C  
Uni-directional  
P600  
Terminals: Matte tin plated leads, solderable per  
J-STD-002 and JESD 22-B102  
E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix  
meets JESD 201 class 2 whisker test  
Polarity: Color band denotes cathode end  
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)  
PARAMETER  
SYMBOL  
PPPM  
IPPM  
LIMIT  
5000  
UNIT  
W
Peak pulse power dissipation with a 10/1000 μs waveform (1)  
Peak pulse current with a 10/1000 μs waveform (1)  
Power dissipation on infinite heatsink at TL = 75 °C (fig. 5)  
Peak forward surge current 8.3 ms single half sine-wave (fig. 5)  
Instantaneous forward voltage at 100 A (2)  
See next table  
8.0  
A
PD  
W
IFSM  
600  
A
VF  
3.5  
V
Operating junction and storage temperature range  
TJ, TSTG  
-55 to +175  
°C  
Notes  
(1)  
Non-repetitive current pulse, per fig. 3 and derated above TA = 25 °C per fig. 2  
Measured 8.3 ms single half sine-wave or equivalent square wave, duty cycle = 4 pulses per minute maximum  
(2)  
Revision: 24-Jun-14  
Document Number: 88308  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

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