Datasheet > 5KP8.5C-B

5KP8.5C-B

更新时间： 2024-02-01 04:35:54

品牌	Logo	应用领域
力特 - LITTELFUSE		二极管电视
页数	文件大小	规格书
6页	890K
描述
TVS DIODE

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中文翻译

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技术参数
数据手册

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5KP8.5C-B 技术参数

是否无铅：	不含铅	是否Rohs认证：	符合
生命周期：	Active	包装说明：	O-PALF-W2
针数：	2	Reach Compliance Code：	not_compliant
ECCN代码：	EAR99	HTS代码：	8541.10.00.50
风险等级：	5.49	最大击穿电压：	11.5 V
最小击穿电压：	9.44 V	外壳连接：	ISOLATED
配置：	SINGLE	二极管元件材料：	SILICON
二极管类型：	TRANS VOLTAGE SUPPRESSOR DIODE	JESD-30 代码：	O-PALF-W2
JESD-609代码：	e3	最大非重复峰值反向功率耗散：	5000 W
元件数量：	1	端子数量：	2
最高工作温度：	150 °C	最低工作温度：	-55 °C
封装主体材料：	PLASTIC/EPOXY	封装形状：	ROUND
封装形式：	LONG FORM	峰值回流温度（摄氏度）：	265
极性：	BIDIRECTIONAL	最大功率耗散：	8 W
认证状态：	Not Qualified	表面贴装：	NO
技术：	AVALANCHE	端子面层：	Matte Tin (Sn)
端子形式：	WIRE	端子位置：	AXIAL
处于峰值回流温度下的最长时间：	NOT SPECIFIED	Base Number Matches：	1

5KP8.5C-B 数据手册

TransientVoltage Suppression Diodes

Axial Leaded – 5000W > 5KP series

RoHS

5KP Series

Description

Uni-directional

The 5KP Series is designed speciﬁcally to protect sensitive

electronic equipment from voltage transients induced by

lightning and other transient voltage events.

Features

Bi-directional

• V_BR@T_J= V_BR@25°C × (1+αT • ESD protection of data

lines in accordance with

IEC 61000-4-2 (IEC801-2)

x (T_J- 25))

(αT:Temperature Coefﬁcient)

• EFT protection of data

lines in accordance with

IEC 61000-4-4 (IEC801-4)

• Low incremental surge

resistance

• Glass passivated chip

junction in P600 package

Agency Approvals

• 5000W peak pulse

capability at 10/1000μs

waveform, repetition rate

(duty cycles):0.01%

• Fast response time:

typically less than 1.0ps

from 0 Volts to BV min

AGENCY

AGENCY FILE NUMBER

E128662/E230531

• Typical I_Rless than 2μA

above 12V

• High temperature

soldering guaranteed:

260°C/40 seconds /

0.375”, (9.5mm) lead

length, 5 lbs., (2.3kg)

tension

• Plastic package has

underwriters laboratory

ﬂammability classiﬁcation

94V-O

Maximum Ratings andThermal Characteristics

(T_A=25°C unless otherwise noted)

• Excellent clamping

capability

•Typical failure mode is

short from over-speciﬁed

voltage or current

• Whisker test is conducted

based on JEDEC

JESD201A per its table 4a

and 4c

• IEC-61000-4-2 ESD

Parameter

Symbol

P_PPM

Value

5000

Unit

Peak Pulse Power Dissipation by

10/1000μsTest Waveform (Fig.2)

(Note 1)

Steady State Power Dissipation on

Iniﬁnite Heat Sink atT_L=75ºC (Fig. 6)

P_D

8.0

• Matte tin lead–free plated

• Halogen free and RoHS

compliant

Peak Forward Surge Current, 8.3ms

Single Half Sine Wave Unidirectional

Only (Note 2)

Maximum Instantaneous Forward

Voltage at 100A for Unidirectional

Only (Note 3)

I_FSM

400

15kV(Air), 8kV (Contact)

V_F

3.5/5.0

Applications

Operating Junction and Storage

Temperature Range

T_J, T_STG-55 to 150

°C

TVS devices are ideal for the protection of I/O interfaces,

_CCbus and other vulnerable circuits used in telecom,

computer, industrial and consumer electronic applications.

TypicalThermal Resistance Junction

to Lead

R_uJL

R_uJA

8.0

°C/W

TypicalThermal Resistance Junction

to Ambient

Notes:

1. Non-repetitive current pulse , per Fig. 4 and derated aboveT_A= 25°C per Fig. 3.

2. Measured on 8.3ms single half sine wave or equivalent square wave, duty cycle=4 per

minute maximum.

3. V_F<3.5V for devices of V_BR<_ 200V and V_F<5.0V for devices of V_BR>_ 201V.

Additional Information

Functional Diagram

Datasheet

Resources

Samples

Bi-directional

Cathode

Anode

Uni-directional

Speciﬁcations are subject to change without notice.

Revised: 01/24/14

12 3 4 5 6

中文翻译

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与5KP8.5C-B相关器件

型号	品牌	获取价格	描述	数据表
5KP8.5CB-2	LITTELFUSE	获取价格	Trans Voltage Suppressor Diode, 5000W, Bidirectional, 1 Element, Silicon
5KP8.5C-BP	MCC	获取价格	Trans Voltage Suppressor Diode, 5000W, 8.5V V(RWM), Bidirectional, 1 Element, Silicon, ROH
5KP8.5C-BP-HF	MCC	获取价格	暂无描述
5KP8.5CCOX.120	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 5000W, 8.5V V(RWM), Bidirectional, 1 Element, Silicon,
5KP8.5CCOX.200	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 5000W, 8.5V V(RWM), Bidirectional, 1 Element, Silicon,
5KP8.5C-E3/1	VISHAY	获取价格	Trans Voltage Suppressor Diode, 5000W, 8.5V V(RWM), Bidirectional, 1 Element, Silicon, PLA
5KP8.5CE3TR	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 5000W, 8.5V V(RWM), Bidirectional, 1 Element, Silicon, DO-
5KP8.5C-F	RECTRON	获取价格	Transient Suppressor,
5KP8.5C-G	SENSITRON	获取价格	Trans Voltage Suppressor Diode, 5000W, 8.5V V(RWM), Bidirectional, 1 Element, Silicon, ROH
5KP8.5C-GT3	SENSITRON	获取价格	Trans Voltage Suppressor Diode, 5000W, 8.5V V(RWM), Bidirectional, 1 Element, Silicon, ROH

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