Datasheet > 5KP7.0HE3/54

5KP7.0HE3/54

更新时间： 2024-11-13 08:59:47

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
6页	91K
描述
Trans Voltage Suppressor Diode, 5000W, 7V V(RWM), Unidirectional, 1 Element, Silicon, ROHS COMPLIANT, PLASTIC, CASE P600, 2 PIN

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

5KP7.0HE3/54 数据手册

5KP5.0 thru 5KP188A

Vishay General Semiconductor

TRANSZORB^®Transient Voltage Suppressors

FEATURES

• P600, glass passivated chip junction

• Available in uni-directional polarity only

• 5000 W peak pulse power capability with a

10/1000 µs waveform, repetitive rate (duty

cycle): 0.01 %

• Excellent clamping capability

• Very fast response time

Case Style P600

• Low incremental surge resistance

• Solder dip 260 °C, 40 s

• Component in accordance to RoHS 2002/95/EC

and WEEE 2002/96/EC

TYPICAL APPLICATIONS

Use in sensitive electronics protection against voltage

transients induced by inductive load switching and

lighting on ICs, MOSFET, signal lines of sensor units

for consumer, computer, industrial, automotive and

telecommunication.

PRIMARY CHARACTERISTICS

V_WM

P_PPM

P_D

5.0 V to 188 V

5000 W

8.0 W

MECHANICAL DATA

Case: Molded epoxy body over passivated junction

Molding compound meets UL 94 V-0 flammability

rating

I_FSM

500 A

T_Jmax.

175 °C

Base P/N-E3 - RoHS compliant, commercial grade

Base P/NHE3 - RoHS compliant, high reliability/

automotive grade (AEC Q101 qualified)

Terminals: Matte tin plated leads, solderable per

J-STD-002 and JESD22-B102

E3 suffix meets JESD 201 class 1A whisker test, HE3

suffix meets JESD 201 class 2 whisker test

Polarity: Color band denotes cathode end

MAXIMUM RATINGS (T = 25 °C unless otherwise noted)

PARAMETER

SYMBOL

P_PPM

I_PPM

VALUE

5000

UNIT

Peak pulse power dissipation with a 10/1000 µs waveform ⁽¹⁾

Peak pulse current with a 10/1000 µs waveform ⁽¹⁾

Power dissipation on infinite heatsink at T_L= 75 °C (Fig. 5)

Peak forward surge current 8.3 ms single half sine-wave (Fig. 5)

Instantaneous forward voltage at 100 A ⁽²⁾

See next table

8.0

P_D

I_FSM

600

V_F

3.5

Operating junction and storage temperature range

T_J, T_STG

- 55 to + 175

°C

Notes:

(1) Non-repetitive current pulse, per Fig. 3 and derated above T_A= 25 °C per Fig. 2

(2) Measured on 8.3 ms single half sine-wave or equivalent square wave, duty cycle = 4 pulses per minute maximum

Document Number: 88308

Revision: 21-Oct-08

For technical questions within your region, please contact one of the following:

PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com

www.vishay.com

12 3 4 5 6

中文翻译

下载PDF

与5KP7.0HE3/54相关器件

型号	品牌	获取价格	描述	数据表
5KP7.0J	MIC	获取价格	PASSIVATED JUNCTION TRANSIENT VOLTAGE SUPPRESSOR
5KP7.0PT	CHENMKO	获取价格	VOLTAGE-5.0 TO 110 VOLTS 5000 WATTS PEAK POWER 8.0 WATTS STEADY STATE
5KP7.0T	LITTELFUSE	获取价格	Trans Voltage Suppressor Diode, 5000W, 7V V(RWM), Unidirectional, 1 Element, Silicon, PLAS
5KP7.0-T/B	FRONTIER	获取价格	Trans Voltage Suppressor Diode, Unidirectional, 1 Element, Silicon
5KP7.0T-2	CRYDOM	获取价格	Trans Voltage Suppressor Diode, 5000W, Unidirectional, 1 Element, Silicon
5KP7.0-T3-LF	WTE	获取价格	Trans Voltage Suppressor Diode, 5000W, 7V V(RWM), Unidirectional, 1 Element, Silicon, ROHS
5KP7.0V	RECTRON	获取价格	Package / Case : R-6;Mounting Style : Through Hole;Power Rating : 5000 W;Polarity : Unidir
5KP7.5	DCCOM	获取价格	TECHNICAL SPECIFICATIONS OF TRANSIENT VOLTAGE SUPPRESSOR
5KP7.5	EIC	获取价格	TRANSIENT VOLTAGE SUPPRESSOR
5KP7.5	SSE	获取价格	TRANSIENT VOLTAGE SUPPRESSOR

与5KP7.0HE3/54相关文章

国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

23
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

8
AMD宣布全球裁员约1000人，调整战略聚焦增长
2024-11-14

9
英伟达新AI芯片Rubin或提前半年亮相
2024-11-05

32

产品中心

服务支持

精选活动

关于我们

帮助中心

5KP7.0HE3/54

5KP7.0HE3/54 数据手册

与5KP7.0HE3/54相关器件

与5KP7.0HE3/54相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

5KP7.0HE3/54

5KP7.0HE3/54 数据手册

与5KP7.0HE3/54相关器件

与5KP7.0HE3/54相关文章

您还可以找

您在本页遇到什么问题？