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5KP6.5A-HRA PDF预览

5KP6.5A-HRA

更新时间: 2024-11-12 21:00:47
品牌 Logo 应用领域
力特 - LITTELFUSE 局域网二极管
页数 文件大小 规格书
7页 1067K
描述
Trans Voltage Suppressor Diode, 5000W, 6.5V V(RWM), Unidirectional, 1 Element, Silicon,

5KP6.5A-HRA 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:O-PALF-W2Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.10.00.50
风险等级:5.64其他特性:EXCELLENT CLAMPING CAPABILITY, HIGH RELIABILITY, UL RECOGNIZED
最大击穿电压:7.98 V最小击穿电压:7.22 V
外壳连接:ISOLATED配置:SINGLE
二极管元件材料:SILICON二极管类型:TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 代码:O-PALF-W2最大非重复峰值反向功率耗散:5000 W
元件数量:1端子数量:2
最高工作温度:175 °C最低工作温度:-55 °C
封装主体材料:PLASTIC/EPOXY封装形状:ROUND
封装形式:LONG FORM极性:UNIDIRECTIONAL
最大功率耗散:8 W参考标准:IEC-61000-4-2; IEC-61000-4-4
最大重复峰值反向电压:6.5 V表面贴装:NO
技术:AVALANCHE端子形式:WIRE
端子位置:AXIALBase Number Matches:1

5KP6.5A-HRA 数据手册

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TVS Diodes  
Axial Leaded – 5000W > 5KP-HRA series  
Pb e3  
RoHS  
5KP-HRA Series  
Description  
Uni-directional  
The 5KP-HRA High Reliability Series is designed specifically  
to protect sensitive electronic equipment from voltage  
transients induced by lightning and other transient voltage  
events.  
Features  
Bi-directional  
• 5000W peak pulse  
capability at 10/1000μs  
waveform, repetition rate  
(duty cycles):0.01%  
• Glass passivated chip  
junction in P600 package  
• Fast response time:  
typically less than 1.0ps  
from 0 Volts to BV min  
• Excellent clamping  
capability  
Typical failure mode is  
short from over-specified  
voltage or current  
• Whisker test is conducted  
based on JEDEC  
Typical IR less than 2μA  
when VBR min>12V  
• High temperature  
to reflow soldering  
guaranteed: 260°C/10sec  
/ 0.375, (9.5mm) lead  
length, 5 lbs., (2.3kg)  
tension  
• VBR @TJ= VBR@25°C  
x (1+αT x (TJ - 25))  
(αT:Temperature  
Coefficient, typical value  
is 0.1%)  
• Plastic package is  
flammability rated V-0 per  
Underwriters Laboratories  
• Lead-free matte tin plated  
package  
Agency Approvals  
AGENCY  
AGENCY FILE NUMBER  
E230531  
Maximum Ratings andThermal Characteristics  
(TA=25OC unless otherwise noted)  
Parameter  
Symbol  
PPPM  
Value  
5000  
Unit  
W
Peak Pulse Power Dissipation by  
10/1000μsTest Waveform (Fig.2)  
(Note 1)  
JESD201A per its table 4a  
and 4c  
Steady State Power Dissipation on  
Infinite Heat Sink atTL=75ºC  
PD  
8.0  
W
A
• Halogen free and RoHS  
compliant  
• IEC-61000-4-2 ESD  
30kV(Air), 30kV (Contact)  
Peak Forward Surge Current, 8.3ms  
Single Half Sine Wave Unidirectional  
Only (Note 2)  
Maximum Instantaneous Forward  
Voltage at 100A for Unidirectional  
Only (Note 3)  
• Pb-free E3 means 2nd  
level interconnect is  
Pb-free and the terminal  
finish material is tin(Sn)  
(IPC/JEDEC J-STD-  
609A.01)  
IFSM  
400  
• ESD protection of data  
lines in accordance with  
IEC 61000-4-2  
• EFT protection of data  
lines in accordance with  
IEC 61000-4-4  
VF  
3.5/5.0  
V
Operating Junction and Storage  
Temperature Range  
TJ, TSTG -55 to 175  
°C  
• Low incremental surge  
resistance  
TypicalThermal Resistance Junction  
to Lead  
RuJL  
RuJA  
8.0  
40  
°C/W  
°C/W  
TypicalThermal Resistance Junction  
to Ambient  
Notes:  
1. Non-repetitive current pulse , per Fig. 4 and derated aboveTJ (initial) =25OC per Fig. 3.  
Applications  
2. Measured on 8.3ms single half sine wave or equivalent square wave, duty cycle=4 per  
minute maximum.  
TVS devices are ideal for the protection of I/O interfaces,  
VCC bus and other vulnerable circuits used in telecom,  
computer, industrial and consumer electronic applications.  
3. VF < 3.5V for single die parts and VF< 5.0V for stacked-die parts.  
Functional Diagram  
Bi-directional  
Cathode  
Anode  
Uni-directional  
© 2016 Littelfuse, Inc.  
Specifications are subject to change without notice.  
Revised: 09/10/16  

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