Datasheet > 5KP51A-HR

5KP51A-HR

更新时间： 2024-12-02 13:45:19

品牌	Logo	应用领域
力特 - LITTELFUSE		电子电信电脑
页数	文件大小	规格书
7页	1027K
描述
5KP-HR高可靠性系列专门用于保护敏感电子设备，使其免受雷击和其他瞬态电压事件引起的瞬态电压侵害应用: 瞬态抑制设备非常适合保护输入/输出接口、VCC总线和其他用于电信、电脑、工业和消费电子产品的易损电路。

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

5KP51A-HR 数据手册

TVS Diodes

Axial Leaded – 5000W > 5KP-HR series

Pb e3

RoHS

5KP-HR Series

Description

Uni-directional

The 5KP-HR High Reliability Series is designed speciﬁcally

to protect sensitive electronic equipment from voltage

transients induced by lightning and other transient voltage

events.

Features

Bi-directional

• 5000W peak pulse

capability at 10/1000μs

waveform, repetition rate

(duty cycles):0.01%

• Glass passivated chip

junction in P600 package

• Very fast response time

• Excellent clamping

capability

•Typical failure mode is

short from over-speciﬁed

voltage or current

• Whisker test is conducted

based on JEDEC

JESD201A per its table 4a

and 4c

• IEC-61000-4-2 ESD

• High temperature

soldering guaranteed:

260C/10 seconds / 0.375”,

(9.5mm) lead length, 5

lbs., (2.3kg) tension

• V_BR@T_J= V_BR@25°C

x (1+αT x (T_J- 25))

(αT:Temperature

Coefﬁcient, typical value

is 0.1%)

• Plastic package is

ﬂammability rated V-0 per

Underwriters Laboratories

• Lead-free matte tin plated

package

• Halogen free and RoHS

compliant

Agency Approvals

AGENCY

AGENCY FILE NUMBER

E230531

Maximum Ratings andThermal Characteristics

(T_A=25^OC unless otherwise noted)

Parameter

Symbol

P_PPM

Value

5000

Unit

Peak Pulse Power Dissipation by

10/1000μsTest Waveform (Fig.2)

(Note 1)

• Pb-free E3 means 2nd

level interconnect is Pb-

free and the terminal ﬁnish

material is tin(Sn) (IPC/

JEDEC J-STD-609A.01)

30kV(Air), 30kV (Contact)

Steady State Power Dissipation on

Inﬁnite Heat Sink atT_L=75ºC

P_D

8.0

• ESD protection of data

lines in accordance with

IEC 61000-4-2

• EFT protection of data

lines in accordance with

IEC 61000-4-4

Peak Forward Surge Current, 8.3ms

Single Half Sine Wave Unidirectional

Only (Note 2)

Maximum Instantaneous Forward

Voltage at 100A for Unidirectional

Only (Note 3)

I_FSM

400

V_F

3.5/5.0

• Low incremental surge

resistance

Operating Junction and Storage

Temperature Range

T_J, T_STG-55 to 175

°C

• Typical I_Rless than 2μA

when V_BRmin>12V

TypicalThermal Resistance Junction

to Lead

R_uJL

R_uJA

8.0

°C/W

TypicalThermal Resistance Junction

to Ambient

Applications

Notes:

1. Non-repetitive current pulse , per Fig. 4 and derated aboveT_J(initial) =25^OC per Fig. 3.

TVS devices are ideal for the protection of I/O interfaces,

V_CCbus and other vulnerable circuits used in telecom,

computer, industrial and consumer electronic applications.

2. Measured on 8.3ms single half sine wave or equivalent square wave, duty cycle=4 per

minute maximum.

3. V_F< 3.5V for single die parts and V_F< 5.0V for stacked-die parts.

Functional Diagram

Bi-directional

Cathode

Anode

Uni-directional

Speciﬁcations are subject to change without notice.

Revised: 09/10/16

12 3 4 5 6 7

中文翻译

下载PDF

与5KP51A-HR相关器件

型号	品牌	获取价格	描述	数据表
5KP51A-HRA	LITTELFUSE	获取价格	5KP-HRA高可靠性系列专门用于保护敏感电子设备，使其免受雷击和其他瞬态电压事件引起的瞬
5KP51AJ	MIC	获取价格	PASSIVATED JUNCTION TRANSIENT VOLTAGE SUPPRESSOR
5KP51AL	MCC	获取价格	Tape&Reel : 500Pcs/Reel; Bulk: 200Pcs/Box; Ammo Packing: 450Pcs/AmmoBox;
5KP51APT	CHENMKO	获取价格	VOLTAGE-5.0 TO 110 VOLTS 5000 WATTS PEAK POWER 8.0 WATTS STEADY STATE
5KP51AT-2	LITTELFUSE	获取价格	Trans Voltage Suppressor Diode, 5000W, Unidirectional, 1 Element, Silicon,
5KP51A-TP	MCC	获取价格	Trans Voltage Suppressor Diode, 5000W, 51V V(RWM), Unidirectional, 1 Element, Silicon, ROH
5KP51AV	RECTRON	获取价格	Package / Case : R-6;Mounting Style : Through Hole;Power Rating : 5000 W;Polarity : Unidir
5KP51B	DIODES	获取价格	Trans Voltage Suppressor Diode, 5000W, Unidirectional, 1 Element, Silicon
5KP51B	LITTELFUSE	获取价格	Trans Voltage Suppressor Diode, 5000W, 51V V(RWM), Unidirectional, 1 Element, Silicon, ROH
5KP51-B	RECTRON	获取价格	Trans Voltage Suppressor Diode, 5000W, Unidirectional, 1 Element, Silicon, PLASTIC, R-6, 2

与5KP51A-HR相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

53
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

42
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

70
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

66

产品中心

服务支持

精选活动

关于我们

帮助中心

5KP51A-HR

5KP51A-HR 数据手册

与5KP51A-HR相关器件

与5KP51A-HR相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

5KP51A-HR

5KP51A-HR 数据手册

与5KP51A-HR相关器件

与5KP51A-HR相关文章

您还可以找

您在本页遇到什么问题？