是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Active | 包装说明: | O-PALF-W2 |
针数: | 2 | Reach Compliance Code: | not_compliant |
ECCN代码: | EAR99 | HTS代码: | 8541.10.00.50 |
风险等级: | 5.31 | 最大击穿电压: | 69.3 V |
最小击穿电压: | 56.7 V | 击穿电压标称值: | 63 V |
外壳连接: | ISOLATED | 最大钳位电压: | 91.1 V |
配置: | SINGLE | 二极管元件材料: | SILICON |
二极管类型: | TRANS VOLTAGE SUPPRESSOR DIODE | JESD-30 代码: | O-PALF-W2 |
JESD-609代码: | e3 | 最大非重复峰值反向功率耗散: | 5000 W |
元件数量: | 1 | 端子数量: | 2 |
最高工作温度: | 150 °C | 最低工作温度: | -55 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | ROUND |
封装形式: | LONG FORM | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性: | BIDIRECTIONAL | 最大功率耗散: | 8 W |
最大重复峰值反向电压: | 51 V | 子类别: | Transient Suppressors |
表面贴装: | NO | 技术: | AVALANCHE |
端子面层: | Tin (Sn) | 端子形式: | WIRE |
端子位置: | AXIAL | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
5KP51C/23-E3 | VISHAY |
获取价格 |
DIODE 5000 W, BIDIRECTIONAL, SILICON, TVS DIODE, PLASTIC, P600, 2 PIN, Transient Suppresso | |
5KP51C/4 | VISHAY |
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Trans Voltage Suppressor Diode, 5000W, 51V V(RWM), Bidirectional, 1 Element, Silicon, PLAS | |
5KP51C/4-E3 | VISHAY |
获取价格 |
DIODE 5000 W, BIDIRECTIONAL, SILICON, TVS DIODE, PLASTIC, P600, 2 PIN, Transient Suppresso | |
5KP51C-13 | DIODES |
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Trans Voltage Suppressor Diode, 5000W, 51V V(RWM), Bidirectional, 1 Element, Silicon | |
5KP51C-5AE3 | MICROSEMI |
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Trans Voltage Suppressor Diode, 5000W, 51V V(RWM), Bidirectional, 1 Element, Silicon, | |
5KP51C-5R | MICROSEMI |
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Trans Voltage Suppressor Diode, 5000W, 51V V(RWM), Bidirectional, 1 Element, Silicon | |
5KP51C-5RE3 | MICROSEMI |
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Trans Voltage Suppressor Diode, 5000W, 51V V(RWM), Bidirectional, 1 Element, Silicon, | |
5KP51CA | DIOTEC |
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Trans Voltage Suppressor Diode, 5000W, 51V V(RWM), Bidirectional, 1 Element, Silicon, ROHS | |
5KP51CA | TRSYS |
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GLASS PASSIVATED JUNCTION TRANSIENT VOLTAGE SUPPRESSOR | |
5KP51CA | LITTELFUSE |
获取价格 |
Silicon Avalanche Diodes - 5000 Watt Axial Leaded Transient Voltage Suppressor |