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5KP51A

更新时间： 2024-11-30 12:51:27
品牌 Logo 应用领域
MERITEK 瞬态抑制器二极管
页数 文件大小 规格书
4页 253K
描述
Transient Voltage Suppressors

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中文翻译

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5KP51A 技术参数

是否无铅： 不含铅是否Rohs认证： 符合
生命周期：Active包装说明：O-PALF-W2
针数：2Reach Compliance Code：compliant
ECCN代码：EAR99HTS代码：8541.10.00.50
风险等级：5.61Is Samacsys：N
其他特性：EXCELLENT CLAMPING CAPABILITY, UL RECOGNIZED最大击穿电压：62.7 V
最小击穿电压：56.7 V外壳连接：ISOLATED
配置：SINGLE二极管元件材料：SILICON
二极管类型：TRANS VOLTAGE SUPPRESSOR DIODEJESD-30 代码：O-PALF-W2
最大非重复峰值反向功率耗散：5000 W元件数量：1
端子数量：2最高工作温度：175 °C
最低工作温度：-55 °C封装主体材料：PLASTIC/EPOXY
封装形状：ROUND封装形式：LONG FORM
峰值回流温度（摄氏度）：NOT SPECIFIED极性：UNIDIRECTIONAL
最大功率耗散：8 W最大重复峰值反向电压：51 V
表面贴装：NO技术：AVALANCHE
端子形式：WIRE端子位置：AXIAL
处于峰值回流温度下的最长时间：NOT SPECIFIEDBase Number Matches：1

5KP51A 数据手册

 浏览型号5KP51A的Datasheet PDF文件第2页浏览型号5KP51A的Datasheet PDF文件第3页浏览型号5KP51A的Datasheet PDF文件第4页 
Transient Voltage Suppressors  
5KP Series  
MERITEK  
UL E223045  
FEATURES  
— Plastic package.  
— Glass passivated chip junction.  
— 5,000W Peak Pulse Power capability on 10/1000µs waveform.  
— Excellent clamping capability.  
— Repetition rate (duty cycle): 0.05%.  
— Low incremental surge resistance.  
— Fast response time: typically less than 1.0ps from 0 volt to BV min.  
— Typical IR less than 2µA for VBR>=10V.  
— High temperature soldering guaranteed: 265°C/10 seconds/.375",  
(9.5mm) lead length, 5lbs, (2.3kg) tension.  
P600  
MECHANICAL DATA  
— Case: Molded plastic over glass passivated junction.  
— Terminals: Plated Axial leads, solderable per MIL-STD-750, Method 2026.  
— Polarity: Color band denotes cathode except Bipolar.  
— Mounting Position: Any.  
— Weight: 0.07 ounce, 2. ꢀgrams.  
1
DEVICES FOR BIPOLAR APPLICATION  
For Bidirectional use C or CA suffix for type 5KP5.0 through type 5KP250 (e.g. 5KP5.0C, 5KP250CA);  
Electrical characteristics apply in both directions.  
MAXIMUM RATINGS AND CHARACTERISTICS  
Ratings at 25ć ambient temperature unless otherwise specified.  
RATING  
SYMBOL  
VALUE  
UNIT  
Peak Pulse Power Dissipation on 10/1000ȝs waveform. (Note 1ˈFig. 1)  
Peak Pulse Current on 10/1000ȝs waveform. (Note 1ˈFig. 3)  
Steady State Power Dissipation at TL =75ćˈLead length .375” (9.5mm).  
(Fig. 5)  
PPPM  
IPPM  
Minimum 5,000  
Watts  
See Table  
Amps  
8.0  
PM(AV)  
Watts  
Peak Forward Surge Currentˈ8.3ms Single Half Sine-Wave Superimposed  
on Rated Load. (JEDEC Method) (Note 2, Fig. 6)  
400  
IFSM  
Amps  
Operating junction and Storage Temperature Range.  
TJ , TSTG  
-55 to +175  
ć
Notes:  
1. Non-repetitive current pulse, per Fig. 3 and derated above TA = 25ć per Fig. 2.  
2. 8.3ms single half sine-wave, or equivalent square wave, Duty cycle = 4 pulses per minute maximum.  
All specifications are subject to change without notice.  
1
Rev 7  
1234

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 		Trans Voltage Suppressor Diode, 5000W, 51V V(RWM), Unidirectional, 1 Element, Silicon, PLA
5KP51A/53-E3 VISHAY

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 		DIODE 5000 W, UNIDIRECTIONAL, SILICON, TVS DIODE, PLASTIC, CASE P600, 2 PIN, Transient Sup
5KP51A/54 VISHAY

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 		Trans Voltage Suppressor Diode, 5000W, 51V V(RWM), Unidirectional, 1 Element, Silicon, PLA

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