Datasheet > 5KP51A/93-E3

5KP51A/93-E3

更新时间： 2024-12-02 06:45:03

品牌	Logo	应用领域
威世 - VISHAY		电视
页数	文件大小	规格书
6页	108K
描述
DIODE 5000 W, UNIDIRECTIONAL, SILICON, TVS DIODE, PLASTIC, CASE P600, 2 PIN, Transient Suppressor

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

5KP51A/93-E3 数据手册

5KP5.0 thru 5KP188A

Vishay Semiconductors

formerly General Semiconductor

TRANSZORB Transient Voltage Suppressors

Stand-off Voltage 5.0 to 188 V

Peak Pulse Power 5000 W

Features

• Glass passivated junction

• 5000 W peak pulse power capability with a

10/1000 µs waveform, repetition rate (duty cycle):

0.05 %

• Excellent clamping capability

• Low incremental surge resistance

• Very fast response time

• Devices with V_(BR)> 10 V I_Dare typically less than

Mechanical Data

Case: Molded plastic body over glass passivated

junction. Epoxy meets UL 94V-0 Flammability rating

1.0 µA

• Available in uni-directional polarity only

• Meets MSL level 1 per J-STD-020C

• AEC-Q101 qualified

Terminals: Solder plated or matte tin plated

(E3 Suffix) leads, Solderable per J-STD-002B and

Mil-STD-750, Method 2026

High temperature soldering guaranteed:

265 °C/10 seconds, 0.375" (9.5 mm) lead length,

5 lbs. (2.3 kg) tension

Polarity: The color band denotes the cathode, which

is positive with respect to the anode under normal

TVS operation

Maximum Ratings and Characteristics

Ratings 25 °C, unless otherwise specified

Parameter

Peak pulse power dissipation

Test condition

Symbol

Value

5000

Unit

(1)

10/1000 µs waveform

PPM

(1)

Peak pulse current

See next table

8.0

PPM

Steady state power dissipation lead lengths 0.375“ (9.5 mm),

M(AV)

(2)

T = 75 °C

(3)

Peak forward surge current

600

3.5

8.3 ms single half sine-wave

FSM

(3)

Instantaneous forward voltage

100 A

Operating junction and storage

temperature range

T , T

-55 to +175

°C

STG

Notes:

(1) Non-repetitive current pulse, per Fig. 3 and derated above T = 25 °C per Fig. 2.

(2) Mounted on copper pad area of 1.6 x 1.6" (40 x 40 mm) per Fig. 5.

(3) Measured on 8.3 ms single half sine-wave or equivalent square wave, duty cycle = 4 pulses per minute maximum

Document Number 88308

Rev. 1.2, 27-Oct-04

www.vishay.com

12 3 4 5 6

中文翻译

下载PDF

与5KP51A/93-E3相关器件

型号	品牌	获取价格	描述	数据表
5KP51A/B	YAGEO	获取价格	Trans Voltage Suppressor Diode,
5KP51A1	VISHAY	获取价格	5000W, UNIDIRECTIONAL, SILICON, TVS DIODE, PLASTIC, CASE P600, 2 PIN
5KP51A-1-E3	VISHAY	获取价格	DIODE 5000 W, UNIDIRECTIONAL, SILICON, TVS DIODE, PLASTIC, CASE P600, 2 PIN, Transient Sup
5KP51A4	VISHAY	获取价格	5000W, UNIDIRECTIONAL, SILICON, TVS DIODE, PLASTIC, CASE P600, 2 PIN
5KP51A-4-E3	VISHAY	获取价格	DIODE 5000 W, UNIDIRECTIONAL, SILICON, TVS DIODE, PLASTIC, CASE P600, 2 PIN, Transient Sup
5KP51A4-E3	VISHAY	获取价格	DIODE 5000 W, UNIDIRECTIONAL, SILICON, TVS DIODE, PLASTIC, CASE P600, 2 PIN, Transient Sup
5KP51A-5A	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 5000W, 51V V(RWM), Unidirectional, 1 Element, Silicon
5KP51A-5AE3	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 5000W, 51V V(RWM), Unidirectional, 1 Element, Silicon,
5KP51A-5R	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 5000W, 51V V(RWM), Unidirectional, 1 Element, Silicon
5KP51A-5RE3	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 5000W, 51V V(RWM), Unidirectional, 1 Element, Silicon,

与5KP51A/93-E3相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

53
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

42
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

70
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

66

产品中心

服务支持

精选活动

关于我们

帮助中心

5KP51A/93-E3

5KP51A/93-E3 数据手册

与5KP51A/93-E3相关器件

与5KP51A/93-E3相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

5KP51A/93-E3

5KP51A/93-E3 数据手册

与5KP51A/93-E3相关器件

与5KP51A/93-E3相关文章

您还可以找

您在本页遇到什么问题？