是否Rohs认证: | 符合 | 生命周期: | Obsolete |
包装说明: | O-PALF-W2 | 针数: | 2 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
HTS代码: | 8541.10.00.50 | 风险等级: | 5.15 |
最大击穿电压: | 13.6 V | 最小击穿电压: | 11.1 V |
外壳连接: | ISOLATED | 配置: | SINGLE |
二极管元件材料: | SILICON | 二极管类型: | TRANS VOLTAGE SUPPRESSOR DIODE |
JESD-30 代码: | O-PALF-W2 | JESD-609代码: | e3 |
最大非重复峰值反向功率耗散: | 5000 W | 元件数量: | 1 |
端子数量: | 2 | 最高工作温度: | 175 °C |
最低工作温度: | -55 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | ROUND | 封装形式: | LONG FORM |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性: | BIDIRECTIONAL |
最大功率耗散: | 8 W | 认证状态: | Not Qualified |
最大重复峰值反向电压: | 10 V | 表面贴装: | NO |
技术: | AVALANCHE | 端子面层: | MATTE TIN |
端子形式: | WIRE | 端子位置: | AXIAL |
处于峰值回流温度下的最长时间: | NOT APPLICABLE | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
5KP10C-E3/4 | VISHAY |
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Trans Voltage Suppressor Diode, 5000W, 10V V(RWM), Bidirectional, 1 Element, Silicon, PLAS | |
5KP10CE3TR | MICROSEMI |
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Trans Voltage Suppressor Diode, 5000W, 10V V(RWM), Bidirectional, 1 Element, Silicon, DO-2 | |
5KP10C-G | COMCHIP |
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Trans Voltage Suppressor Diode, 10V V(RWM), Bidirectional, | |
5KP10C-GT3 | SENSITRON |
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Trans Voltage Suppressor Diode, 5000W, 10V V(RWM), Bidirectional, 1 Element, Silicon, ROHS | |
5KP10C-LF | PROTEC |
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Trans Voltage Suppressor Diode, 5000W, 10V V(RWM), Bidirectional, 1 Element, Silicon, | |
5KP10COX.120 | MICROSEMI |
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Trans Voltage Suppressor Diode, 5000W, 10V V(RWM), Unidirectional, 1 Element, Silicon, | |
5KP10COX.160 | MICROSEMI |
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Trans Voltage Suppressor Diode, 5000W, 10V V(RWM), Unidirectional, 1 Element, Silicon, | |
5KP10COX.200 | MICROSEMI |
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Trans Voltage Suppressor Diode, 5000W, 10V V(RWM), Unidirectional, 1 Element, Silicon, | |
5KP10COX.250 | MICROSEMI |
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Trans Voltage Suppressor Diode, 5000W, 10V V(RWM), Unidirectional, 1 Element, Silicon, | |
5KP10CS | DIODES |
获取价格 |
Trans Voltage Suppressor Diode, 5000W, 10V V(RWM), Bidirectional, 1 Element, Silicon |