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5KP10A-HR

更新时间： 2024-11-14 01:20:03
品牌 Logo 应用领域
力特 - LITTELFUSE 局域网二极管
页数 文件大小 规格书
7页 1027K
描述
The 5KP-HR High Reliability Series is designed specifically to protect sensitive electronic equipment from voltage transients induced by lightning and other transient voltage events

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中文翻译

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5KP10A-HR 技术参数

是否Rohs认证： 符合生命周期：Active
包装说明：O-PALF-W2Reach Compliance Code：unknown
ECCN代码：EAR99HTS代码：8541.10.00.50
风险等级：5.6其他特性：EXCELLENT CLAMPING CAPABILITY, HIGH RELIABILITY, UL RECOGNIZED
最大击穿电压：12.3 V最小击穿电压：11.1 V
外壳连接：ISOLATED配置：SINGLE
二极管元件材料：SILICON二极管类型：TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 代码：O-PALF-W2最大非重复峰值反向功率耗散：5000 W
元件数量：1端子数量：2
最高工作温度：175 °C最低工作温度：-55 °C
封装主体材料：PLASTIC/EPOXY封装形状：ROUND
封装形式：LONG FORM极性：UNIDIRECTIONAL
最大功率耗散：8 W参考标准：IEC-61000-4-2; IEC-61000-4-4
最大重复峰值反向电压：10 V表面贴装：NO
技术：AVALANCHE端子形式：WIRE
端子位置：AXIALBase Number Matches：1

5KP10A-HR 数据手册

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TVS Diodes  
Axial Leaded – 5000W > 5KP-HR series  
Pb e3  
RoHS  
5KP-HR Series  
Description  
Uni-directional  
The 5KP-HR High Reliability Series is designed specifically  
to protect sensitive electronic equipment from voltage  
transients induced by lightning and other transient voltage  
events.  
Features  
Bi-directional  
• 5000W peak pulse  
capability at 10/1000μs  
waveform, repetition rate  
(duty cycles):0.01%  
• Glass passivated chip  
junction in P600 package  
• Very fast response time  
• Excellent clamping  
capability  
•Typical failure mode is  
short from over-specified  
voltage or current  
• Whisker test is conducted  
based on JEDEC  
JESD201A per its table 4a  
and 4c  
• IEC-61000-4-2 ESD  
• High temperature  
soldering guaranteed:  
260C/10 seconds / 0.375”,  
(9.5mm) lead length, 5  
lbs., (2.3kg) tension  
• VBR @TJ= VBR@25°C  
x (1+αT x (TJ - 25))  
(αT:Temperature  
Coefficient, typical value  
is 0.1%)  
• Plastic package is  
flammability rated V-0 per  
Underwriters Laboratories  
• Lead-free matte tin plated  
package  
• Halogen free and RoHS  
compliant  
Agency Approvals  
AGENCY  
AGENCY FILE NUMBER  
E230531  
Maximum Ratings andThermal Characteristics  
(TA=25OC unless otherwise noted)  
Parameter  
Symbol  
PPPM  
Value  
5000  
Unit  
W
Peak Pulse Power Dissipation by  
10/1000μsTest Waveform (Fig.2)  
(Note 1)  
• Pb-free E3 means 2nd  
level interconnect is Pb-  
free and the terminal finish  
material is tin(Sn) (IPC/  
JEDEC J-STD-609A.01)  
30kV(Air), 30kV (Contact)  
Steady State Power Dissipation on  
Infinite Heat Sink atTL=75ºC  
PD  
8.0  
W
A
• ESD protection of data  
lines in accordance with  
IEC 61000-4-2  
• EFT protection of data  
lines in accordance with  
IEC 61000-4-4  
Peak Forward Surge Current, 8.3ms  
Single Half Sine Wave Unidirectional  
Only (Note 2)  
Maximum Instantaneous Forward  
Voltage at 100A for Unidirectional  
Only (Note 3)  
IFSM  
400  
VF  
3.5/5.0  
V
• Low incremental surge  
resistance  
Operating Junction and Storage  
Temperature Range  
TJ, TSTG -55 to 175  
°C  
• Typical IR less than 2μA  
when VBR min>12V  
TypicalThermal Resistance Junction  
to Lead  
RuJL  
RuJA  
8.0  
40  
°C/W  
°C/W  
TypicalThermal Resistance Junction  
to Ambient  
Applications  
Notes:  
1. Non-repetitive current pulse , per Fig. 4 and derated aboveTJ (initial) =25OC per Fig. 3.  
TVS devices are ideal for the protection of I/O interfaces,  
VCC bus and other vulnerable circuits used in telecom,  
computer, industrial and consumer electronic applications.  
2. Measured on 8.3ms single half sine wave or equivalent square wave, duty cycle=4 per  
minute maximum.  
3. VF < 3.5V for single die parts and VF< 5.0V for stacked-die parts.  
Functional Diagram  
Bi-directional  
Cathode  
Anode  
Uni-directional  
© 2016 Littelfuse, Inc.  
Specifications are subject to change without notice.  
Revised: 09/10/16  
1234567

中文翻译

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