Datasheet > 5KP10A-4-E3

5KP10A-4-E3

更新时间： 2024-11-14 08:07:19

品牌	Logo	应用领域
威世 - VISHAY		电视
页数	文件大小	规格书
4页	54K
描述
DIODE 5000 W, UNIDIRECTIONAL, SILICON, TVS DIODE, PLASTIC, CASE P600, 2 PIN, Transient Suppressor

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5KP10A-4-E3 数据手册

5KP5.0 thru 5KP188A

Vishay Semiconductors

formerly General Semiconductor

TRANSZORB^®Transient Voltage Supressors

Stand-off Voltage 5.0 to 188V

Peak Pulse Power 5000W

Features

Case Style P600

• Plastic package has Underwriters Laboratory

Flammability Classification 94V-0

• Glass passivated junction

• 5000W peak pulse power capability with a 10/1000µs

waveform, repetition rate (duty cycle): 0.05%

1.0 (25.4)

• Excellent clamping capability

MIN.

• Low incremental surge resistance

• Very fast response time

0.360 (9.1)

0.340 (8.6)

• Devices with V_(BR)> 10V I_Dare typically less than 1.0µA

• Available in uni-directional polarity only

0.360 (9.1)

0.340 (8.6)

Mechanical Data

Case: Molded plastic body over glass passivated junction

Terminals: Solder plated axial leads, solderable per

MIL-STD-750, Method 2026

High temperature soldering guaranteed:

265°C/10 seconds, 0.375" (9.5mm) lead length,

5lbs. (2.3 kg) tension

0.052 (1.32)

1.0 (25.4)

MIN.

0.048 (1.22)

DIA.

Polarity: The color band denotes the cathode, which is

positive with respect to the anode under normal TVS

operation

Mounting Position: Any

Weight: 0.07 oz., 2.1 g

Dimensions in inches and (millimeters)

Packaging codes/options:

1/750 ea. per Bulk Box

4/800 ea. per 13" Reel (52mm Tape)

23/300 ea. per Ammo Box (52mm Tape)

Maximum Ratings and Characteristics Ratings at 25°C unless otherwise noted.

Parameter

Symbol

Value

Unit

Peak pulse power dissipation with a 10/1000µs waveform⁽¹⁾

Peak pulse current with a 10/1000µs waveform⁽¹⁾

P_PPM

5000

I_PPM

See next table

Steady state power dissipation at T_L= 75°C

lead lengths 0.375” (9.5mm)⁽²⁾

P_M(AV)

8.0

Peak forward surge current, 8.3ms single half sine-wave⁽³⁾

Instantaneous forward voltage at 100A⁽³⁾

I_FSM

V_F

600

3.5

Operating junction and storage temperature range

T_J, T_STG

–55 to +175

°C

Notes:

(1) Non-repetitive current pulse, per Fig. 3 and derated above T_A= 25°C per Fig. 2.

(2) Mounted on copper pad area of 1.6 x 1.6” (40 x 40mm) per Fig. 5.

(3) Measured on 8.3ms single half sine-wave or equivalent square wave,

duty cycle = 4 pulses per minute maximum

Document Number 88308

11-Mar-04

www.vishay.com

12 3 4

中文翻译

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与5KP10A-4-E3相关器件

型号	品牌	获取价格	描述	数据表
5KP10A4-E3	VISHAY	获取价格	DIODE 5000 W, UNIDIRECTIONAL, SILICON, TVS DIODE, PLASTIC, CASE P600, 2 PIN, Transient Sup
5KP10A-5A	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 5000W, 10V V(RWM), Unidirectional, 1 Element, Silicon
5KP10A-5AE3	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 5000W, 10V V(RWM), Unidirectional, 1 Element, Silicon,
5KP10A-5R	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 5000W, 10V V(RWM), Unidirectional, 1 Element, Silicon
5KP10A-5RE3	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 5000W, 10V V(RWM), Unidirectional, 1 Element, Silicon,
5KP10A-AP	MCC	获取价格	Trans Voltage Suppressor Diode, 5000W, 10V V(RWM), Unidirectional, 1 Element, Silicon, ROH
5KP10A-AT	YAGEO	获取价格	瞬态抑制二极管 (车用)
5KP10AB	LITTELFUSE	获取价格	Trans Voltage Suppressor Diode, 5000W, Unidirectional, 1 Element, Silicon
5KP10A-B	LITTELFUSE	获取价格	Transient Voltage Suppression Diodes
5KP10A-B	DIODES	获取价格	Trans Voltage Suppressor Diode, 5000W, Unidirectional, 1 Element, Silicon

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