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5KA17AHE3/54 PDF预览

5KA17AHE3/54

更新时间: 2024-11-05 19:34:31
品牌 Logo 应用领域
威世 - VISHAY 局域网二极管电视
页数 文件大小 规格书
5页 81K
描述
DIODE 5000 W, UNIDIRECTIONAL, SILICON, TVS DIODE, ROHS COMPLIANT, PLASTIC, CASE P600, 2 PIN, Transient Suppressor

5KA17AHE3/54 技术参数

生命周期:Active包装说明:O-PALF-W2
针数:2Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.10.00.50
风险等级:5.76最大击穿电压:20.9 V
最小击穿电压:18.9 V外壳连接:ISOLATED
配置:SINGLE二极管元件材料:SILICON
二极管类型:TRANS VOLTAGE SUPPRESSOR DIODEJESD-30 代码:O-PALF-W2
JESD-609代码:e3最大非重复峰值反向功率耗散:5000 W
元件数量:1端子数量:2
最高工作温度:185 °C最低工作温度:-55 °C
封装主体材料:PLASTIC/EPOXY封装形状:ROUND
封装形式:LONG FORM极性:UNIDIRECTIONAL
最大功率耗散:5.5 W参考标准:AEC-Q101
最大重复峰值反向电压:17 V表面贴装:NO
技术:AVALANCHE端子面层:MATTE TIN
端子形式:WIRE端子位置:AXIAL
Base Number Matches:1

5KA17AHE3/54 数据手册

 浏览型号5KA17AHE3/54的Datasheet PDF文件第2页浏览型号5KA17AHE3/54的Datasheet PDF文件第3页浏览型号5KA17AHE3/54的Datasheet PDF文件第4页浏览型号5KA17AHE3/54的Datasheet PDF文件第5页 
5KA10 thru 5KA24A  
Vishay General Semiconductor  
Surface Mount PAR® Transient Voltage Suppressors  
High Temperature Stability and High Reliability Conditions  
FEATURES  
• Junction passivation optimized design passivated  
anisotropic rectifier technology  
• TJ = 185 °C capability suitable for high reliability  
and automotive requirement  
• Available in uni-directional polarity only  
• Low leakage current  
P600  
• Low forward voltage drop  
• High surge capability  
• Solder dip 275 °C max. 10 s, per JESD 22-B106  
• AEC-Q101 qualified  
• Compliant to RoHS Directive 2002/95/EC and in  
accordance to WEEE 2002/96/EC  
TYPICAL APPLICATIONS  
PRIMARY CHARACTERISTICS  
Use in sensitive electronics protection against voltage  
transients induced by inductive load switching and lighting,  
especially for automotive load dump protection.  
VWM  
PPM (10 x 1000 μs)  
PD  
10 V to 36 V  
P
5000 W  
5.5 W  
MECHANICAL DATA  
IFSM  
400 A  
Case: P600, molded epoxy over passivated junction  
Epoxy meets UL 94 V-0 flammability rating  
TJ max.  
185 °C  
Base P/NHE3 - RoHS compliant, AEC-Q101 qualified  
Terminals: Matte tin plated leads, solderable per  
J-STD-002 and JESD 22-B102D  
HE3 suffix for high reliability grade (AEC-Q101 qualified)  
Polarity: Color band denotes cathode end  
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)  
PARAMETER  
SYMBOL  
VALUE  
minimum 5000  
see next table  
5.5  
UNIT  
W
(1)  
Peak pulse power dissipation with 10/1000 μs waveform  
Peak pulse current with a 10/1000 μs waveform  
Power dissipation on infinite heatsink at TL = 75 °C (fig. 5)  
Peak forward surge current 8.3 ms single half sine-wave (fig. 5)  
Instantaneous forward voltage at 80 A  
PPPM  
(1)  
IPPM  
A
PD  
W
IFSM  
400  
A
(2)  
VF  
1.8  
V
Operating junction and storage temperature range  
TJ, TSTG  
- 55 to + 185  
°C  
Notes  
(1)  
Non-repetitive current pulse, per fig. 3 and derated above TA = 25 °C per fig. 2  
Measured on 8.3 ms single half sine-wave or equivalent square wave, duty cycle = 4 pulses per minute maximum  
(2)  
Document Number: 88466  
Revision: 09-Feb-11  
For technical questions within your region, please contact one of the following:  
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
www.vishay.com  
1

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