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5KP51A-B PDF预览

5KP51A-B

更新时间: 2024-11-30 17:54:39
品牌 Logo 应用领域
RECTRON /
页数 文件大小 规格书
4页 31K
描述
Trans Voltage Suppressor Diode, 5000W, Unidirectional, 1 Element, Silicon, PLASTIC, R-6, 2 PIN

5KP51A-B 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active包装说明:O-PALF-W2
针数:2Reach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8541.10.00.50
风险等级:5.61其他特性:LOW ZENER IMPEDANCE
最大击穿电压:62.7 V最小击穿电压:56.7 V
外壳连接:ISOLATED配置:SINGLE
二极管元件材料:SILICON二极管类型:TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 代码:O-PALF-W2JESD-609代码:e3
最大非重复峰值反向功率耗散:5000 W元件数量:1
端子数量:2最高工作温度:150 °C
最低工作温度:-55 °C封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:LONG FORM
峰值回流温度(摄氏度):265极性:UNIDIRECTIONAL
最大功率耗散:8 W认证状态:Not Qualified
表面贴装:NO技术:AVALANCHE
端子面层:Matte Tin (Sn)端子形式:WIRE
端子位置:AXIAL处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

5KP51A-B 数据手册

 浏览型号5KP51A-B的Datasheet PDF文件第2页浏览型号5KP51A-B的Datasheet PDF文件第3页浏览型号5KP51A-B的Datasheet PDF文件第4页 
TVS  
5KP  
RECTRON  
TECHNICAL SPECIFICATION  
SEMICONDUCTOR  
SERIES  
GPP TRANSIENT VOLTAGE SUPPRESSOR  
5000 WATT PEAK POWER 8.0 WATTS STEADY STATE  
FEATURES  
* Plastic package has underwriters laboratory  
* Glass passivated chip construction  
* 5000 watt surage capability at 1ms  
* Excellent clamping capability  
* Low zener impedance  
R-6  
* Fast response time  
(
)
)
.052 1.3  
(
.048 1.2  
DIA.  
(
)
1.0 25.4  
MIN.  
(
.360 9.1  
)
(
.340 8.6  
)
(
.360 9.1  
)
DIA.  
Ratings at 25 oC ambient temperature unless otherwise specified.  
(
.340 8.6  
)
(
)
1.0 25.4  
MIN.  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
Ratings at 25 oC ambient temperature unless otherwise specified.  
Single phase, half wave, 60 Hz, resistive or inductive load,  
For capacitive load, derate current by 20%.  
Dimensions in inches and (millimeters)  
DEVICES FOR BIPOLAR APPLICATIONS  
For Bidirectional use C or CA suffix for types 5KP5.0 thru 5KP110  
Electrical characteristics apply in both direction  
MAXIMUM RATINGS (At T  
A
= 25oC unless otherwise noted)  
SYMBOL  
VALUE  
UNITS  
RATINGS  
Peak Pulse Power Dissipation with a 10/1000uS  
waveform (Note 1, FIG.1)  
P
PPM  
Minimum 5000  
SEE TABLE 1  
Watts  
Amps  
Peak Pulse Current with a 10/1000uS waveform (Note 1, Fig. 3)  
IPPM  
Steady State Power Dissipation at T  
0.375” (9.5mm) (Note 2)  
L
= 75oC lead lengths  
P
M(AV)  
8.0  
Watts  
Amps  
Peak Forward Surge Current, 8.3ms single half sine wave-  
superimposed on rated load( JEDEC METHOD ) (Note 3)  
I
FSM  
400  
Instantaneous Forward Voltage at 100A, (Note 3)  
Operating and Storage Temperature Range  
V
F
3.5  
Volts  
0 C  
T
J
, TSTG  
-55 to + 150  
2002-12  
NOTES : 1. Non-repetitive current pulse, per Fig.3 and derated above T  
A
= 25oC per Fig.2.  
2. Mounted on copper pad area of 0.8 X 0.8” ( 20 X 20mm ) per Fig. 5  
3. Measured on 8.3mS single half sine-wave or equivalent square wave, duty cycle = 4 pulses per minute maximum.  

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