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5962R10A0301VXB PDF预览

5962R10A0301VXB

更新时间: 2024-11-20 15:43:35
品牌 Logo 应用领域
美国微芯 - MICROCHIP 外围集成电路
页数 文件大小 规格书
18页 389K
描述
Microprocessor Circuit, PBGA349

5962R10A0301VXB 技术参数

生命周期:Active包装说明:BGA,
Reach Compliance Code:compliantHTS代码:8542.31.00.01
风险等级:5.6JESD-30 代码:S-PBGA-B349
长度:25 mm端子数量:349
最高工作温度:125 °C最低工作温度:-55 °C
封装主体材料:PLASTIC/EPOXY封装代码:BGA
封装形状:SQUARE封装形式:GRID ARRAY
认证状态:Qualified座面最大高度:5.9 mm
最大供电电压:1.95 V最小供电电压:1.65 V
标称供电电压:1.8 V表面贴装:YES
技术:CMOS温度等级:MILITARY
端子形式:BALL端子节距:1.27 mm
端子位置:BOTTOM宽度:25 mm
uPs/uCs/外围集成电路类型:MICROPROCESSOR CIRCUITBase Number Matches:1

5962R10A0301VXB 数据手册

 浏览型号5962R10A0301VXB的Datasheet PDF文件第2页浏览型号5962R10A0301VXB的Datasheet PDF文件第3页浏览型号5962R10A0301VXB的Datasheet PDF文件第4页浏览型号5962R10A0301VXB的Datasheet PDF文件第5页浏览型号5962R10A0301VXB的Datasheet PDF文件第6页浏览型号5962R10A0301VXB的Datasheet PDF文件第7页 
REVISIONS  
LTR  
A
DESCRIPTION  
DATE (YR-MO-DA)  
13-02-11  
APPROVED  
Add case outline Z. Correct the maximum iccsba value in table I. Update  
boilerplate in according with MIL-PRF-38535 requirement. - phn  
Thomas M. Hess  
REV  
SHEET  
REV  
A
A
A
SHEET  
15  
16  
17  
REV STATUS  
OF SHEETS  
PMIC N/A  
REV  
A
1
A
2
A
3
A
4
A
5
A
6
A
7
A
8
A
9
A
A
A
A
SHEET  
10  
11  
12  
13  
14  
PREPARED BY  
DLA LAND AND MARITIME  
COLUMBUS, OHIO 43218-3990  
http://www.landandmaritime.dla.mil  
Phu H. Nguyen  
CHECKED BY  
Phu H. Nguyen  
STANDARD  
MICROCIRCUIT  
DRAWING  
APPROVED BY  
10-01-12  
THIS DRAWING IS AVAILABLE  
FOR USE BY ALL  
DEPARTMENTS  
AND AGENCIES OF THE  
DEPARTMENT OF DEFENSE  
MICROCIRCUIT, DIGITAL, ASIC, CMOS GATE  
ARRAY BASED ON SPACEWIRE REMOTE  
TERMINAL CONTROLLER, MONOLITHIC  
SILICON  
DRAWING APPROVAL DATE  
Thomas M. Hess  
AMSC N/A  
REVISION LEVEL  
SIZE  
A
CAGE CODE  
5962-10A03  
67268  
SHEET  
A
1
OF  
17  
DSCC FORM 2233  
APR 97  
5962-E266-13  

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