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5962F9862901VCC PDF预览

5962F9862901VCC

更新时间: 2024-02-02 06:55:23
品牌 Logo 应用领域
英特矽尔 - INTERSIL 逻辑集成电路
页数 文件大小 规格书
2页 41K
描述
Radiation Hardened Dual 4-Input AND Gate

5962F9862901VCC 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:DFP包装说明:DFP, FL14,.3
针数:14Reach Compliance Code:not_compliant
HTS代码:8542.39.00.01风险等级:5.91
Is Samacsys:N系列:AC
JESD-30 代码:R-CDFP-F14JESD-609代码:e0
负载电容(CL):50 pF逻辑集成电路类型:AND GATE
最大I(ol):0.008 A功能数量:2
输入次数:4端子数量:14
最高工作温度:125 °C最低工作温度:-55 °C
封装主体材料:CERAMIC, METAL-SEALED COFIRED封装代码:DFP
封装等效代码:FL14,.3封装形状:RECTANGULAR
封装形式:FLATPACK峰值回流温度(摄氏度):NOT SPECIFIED
电源:5 VProp。Delay @ Nom-Sup:15 ns
传播延迟(tpd):15 ns认证状态:Not Qualified
施密特触发器:NO筛选级别:MIL-PRF-38535 Class V
座面最大高度:2.92 mm子类别:Gates
标称供电电压 (Vsup):5 V表面贴装:YES
技术:CMOS温度等级:MILITARY
端子面层:Tin/Lead (Sn/Pb)端子形式:FLAT
端子节距:1.27 mm端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED总剂量:300k Rad(Si) V
宽度:6.285 mmBase Number Matches:1

5962F9862901VCC 数据手册

 浏览型号5962F9862901VCC的Datasheet PDF文件第2页 
ACS21MS  
Data Sheet  
July 1999  
File Number 4757  
Radiation Hardened Dual 4-Input AND Gate  
Features  
The Radiation Hardened ACS21MS is a Dual 4-Input AND  
Gate. For each gate, a HIGH level on all inputs results in a  
HIGH level on the Y output. A LOW level on any input  
results in a LOW level on the Y output. All inputs are  
buffered and the outputs are designed for balanced  
propagation delay and transition times.  
• QML Qualified Per MIL-PRF-38535 Requirements  
• 1.25 Micron Radiation Hardened SOS CMOS  
• Radiation Environment  
- Latch-Up Free Under Any Conditions  
5
- Total Dose (Max.) . . . . . . . . . . . . . . . . . 3 x 10 RAD(Si)  
-10  
- SEU Immunity. . . . . . . . . . . . . <1 x 10  
Errors/Bit/Day  
2
The ACS21MS is fabricated on a CMOS Silicon on  
Sapphire (SOS) process, which provides an immunity to  
Single Event Latch-up and the capability of highly reliable  
performance in any radiation environment. These devices  
offer significant power reduction and faster performance  
when compared to ALSTTL types.  
- SEU LET Threshold . . . . . . . . . . . . >100MeV/(mg/cm )  
• Input Logic Levels. . . . V = (0.3)(V ), V = (0.7)(V  
IL CC IH  
)
CC  
• Output Current . . . . . . . . . . . . . . . . . . . . . . . . . . ±12mA (Min)  
• Quiescent Supply Current . . . . . . . . . . . . . . . 5.0µA (Max)  
• Propagation Delay . . . . . . . . . . . . . . . . . . . . . .15ns (Max)  
Specifications for Rad Hard QML devices are controlled  
by the Defense Supply Center in Columbus (DSCC). The  
SMD numbers listed below must be used when ordering.  
Applications  
Detailed Electrical Specifications for the ACS21MS are  
contained in SMD 5962-98629. A “hot-link” is provided  
on our homepage for downloading.  
• High Speed Control Circuits  
• Sensor Monitoring  
• Low Power Designs  
www.intersil.com/spacedefense/newsafclasst.asp  
Ordering Information  
INTERNAL MARKETING  
o
ORDERING NUMBER  
5962F9862901VCC  
NUMBER  
TEMP. RANGE ( C)  
PACKAGE  
14 Ld SBDIP  
DESIGNATOR  
CDIP2-T14  
CDIP2-T14  
CDFP3-F14  
CDFP3-F14  
NA  
ACS21DMSR-03  
-55 to 125  
ACS21D/SAMPLE-03  
5962F9862901VXC  
ACS21K/SAMPLE-03  
5962F9862901V9A  
ACS21D/SAMPLE-03  
ACS21KMSR-03  
25  
-55 to 125  
25  
14 Ld SBDIP  
14 Ld Flatpack  
14 Ld Flatpack  
Die  
ACS21K/SAMPLE-03  
ACS21HMSR-03  
25  
Pinouts  
ACS21MS  
ACS21MS  
(SBDIP)  
(FLATPACK)  
TOP VIEW  
TOP VIEW  
A1  
1
2
3
4
5
6
7
14 V  
CC  
A1  
B1  
1
2
3
4
5
6
7
14  
13  
12  
11  
10  
9
V
CC  
B1  
NC  
13 D2  
12 C2  
11 NC  
10 B2  
D2  
C2  
NC  
B2  
A2  
Y2  
NC  
C1  
C1  
D1  
D1  
Y1  
Y1  
9
8
A2  
Y2  
GND  
8
GND  
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.  
1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 1999  
1

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