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5962F9861301VXC PDF预览

5962F9861301VXC

更新时间: 2024-02-16 14:36:00
品牌 Logo 应用领域
英特矽尔 - INTERSIL 比较器放大器
页数 文件大小 规格书
2页 55K
描述
Radiation Hardened Quad Voltage Comparator

5962F9861301VXC 技术参数

生命周期:Active零件包装代码:DFP
包装说明:DFP,针数:14
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8542.39.00.01风险等级:5.11
Is Samacsys:N放大器类型:COMPARATOR
最大平均偏置电流 (IIB):0.1 µA最大输入失调电压:2000 µV
JESD-30 代码:R-CDFP-F14JESD-609代码:e4
功能数量:4端子数量:14
最高工作温度:125 °C最低工作温度:-55 °C
封装主体材料:CERAMIC, METAL-SEALED COFIRED封装代码:DFP
封装形状:RECTANGULAR封装形式:FLATPACK
认证状态:Qualified筛选级别:MIL-PRF-38535 Class V
子类别:Comparator供电电压上限:36 V
标称供电电压 (Vsup):5 V表面贴装:YES
温度等级:MILITARY端子面层:GOLD
端子形式:FLAT端子位置:DUAL
总剂量:300k Rad(Si) VBase Number Matches:1

5962F9861301VXC 数据手册

 浏览型号5962F9861301VXC的Datasheet PDF文件第1页 
HS-139RH  
Die Characteristics  
DIE DIMENSIONS:  
Backside Finish:  
3750µm x 2820µm (148 mils x 111 mils)  
483µm ± 25.4µm (19 mils ± 1 mil)  
Silicon  
ASSEMBLY RELATED INFORMATION:  
INTERFACE MATERIALS:  
Glassivation:  
Substrate Potential:  
Unbiased (DI)  
Type: Silox (SiO )  
2
Thickness: 8.0kÅ ± 1.0kÅ  
ADDITIONAL INFORMATION:  
Worst Case Current Density:  
Top Metallization:  
5
2
<2.0 x 10 A/cm  
Type: AlSiCu  
Thickness: 16.0kÅ ± 2kÅ  
Transistor Count:  
Substrate:  
49  
Radiation Hardened Silicon Gate, Dielectric Isolation  
Metallization Mask Layout  
HS-139RH  
GND  
(12)  
+IN4  
(11)  
-IN4  
(10)  
OUT4  
(13)  
+IN3  
(9)  
OUT3  
(14)  
-IN3  
(8)  
+IN2  
(7)  
OUT2  
(1)  
-IN2  
(6)  
OUT1  
(2)  
V+  
(3)  
-IN1  
(4)  
+IN1  
(5)  
All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.  
Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time with-  
out notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and  
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result  
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.  
For information regarding Intersil Corporation and its products, see web site www.intersil.com  
2

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