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5962F9676701V9A PDF预览

5962F9676701V9A

更新时间： 2024-02-29 09:09:59
品牌 Logo 应用领域
其他 - ETC 运算放大器
页数 文件大小 规格书
21页 114K
描述
Operational Amplifier

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5962F9676701V9A 技术参数

生命周期：Transferred包装说明：, DIE OR CHIP
Reach Compliance Code：compliantECCN代码：USML XV(E)
HTS代码：8542.39.00.01风险等级：5.43
Is Samacsys：N放大器类型：OPERATIONAL AMPLIFIER
架构：CURRENT-FEEDBACK25C 时的最大偏置电流 (IIB)：25 µA
频率补偿：YES最大输入失调电压：10000 µV
JESD-609代码：e0低-失调：NO
标称负供电电压 (Vsup)：-5 V功能数量：1
最高工作温度：125 °C最低工作温度：-55 °C
封装等效代码：DIE OR CHIP电源：+-5 V
认证状态：Not Qualified筛选级别：38535V;38534K;883S
子类别：Operational Amplifier最大压摆率：7.5 mA
供电电压上限：6 V标称供电电压 (Vsup)：5 V
技术：BIPOLAR温度等级：MILITARY
端子面层：TIN LEAD总剂量：300k Rad(Si) V
宽带：YESBase Number Matches：1

5962F9676701V9A 数据手册

 浏览型号5962F9676701V9A的Datasheet PDF文件第10页浏览型号5962F9676701V9A的Datasheet PDF文件第11页浏览型号5962F9676701V9A的Datasheet PDF文件第12页浏览型号5962F9676701V9A的Datasheet PDF文件第14页浏览型号5962F9676701V9A的Datasheet PDF文件第15页浏览型号5962F9676701V9A的Datasheet PDF文件第16页 
4.4.2.1 Additional criteria for device class M. Steady-state life test conditions, method 1005 of MIL-STD-883:  
a. Test condition A, B, C, or D. The test circuit shall be maintained by the manufacturer under document revision level  
control and shall be made available to the preparing or acquiring activity upon request. The test circuit shall specify  
the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in test method  
1005 of MIL-STD-883.  
b. T = +125°C, minimum.  
A
c. Test duration: 1,000 hours, except as permitted by method 1005 of MIL-STD-883.  
4.4.2.2 Additional criteria for device classes Q and V. The steady-state life test duration, test condition and test temperature,  
or approved alternatives shall be as specified in the device manufacturer's QM plan in accordance with MIL-PRF-38535. The  
test circuit shall be maintained under document revision level control by the device manufacturer's TRB in accordance with  
MIL-PRF-38535 and shall be made available to the acquiring or preparing activity upon request. The test circuit shall specify  
the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in test method 1005 of  
MIL-STD-883.  
4.4.3 Group D inspection. The group D inspection end-point electrical parameters shall be as specified in table IIA herein.  
4.4.4 Group E inspection. Group E inspection is required only for parts intended to be marked as radiation hardness  
assured (see 3.5 herein). RHA levels for device classes M, Q, and V shall be as specified in MIL-PRF-38535. End-point  
electrical parameters shall be as specified in table IIA herein.  
4.4.4.1 Total dose irradiation testing. Total dose irradiation testing shall be performed in accordance with MIL-STD-883  
method 1019, condition A and as specified herein.  
4.4.4.1.1 Accelerated aging test. Accelerated aging tests shall be performed on all devices requiring a RHA level greater  
than 5k rads(Si). The post-anneal end-point electrical parameter limits shall be as specified in table I herein and shall be the  
pre-irradiation end-point electrical parameter limit at 25°C 5°C. Testing shall be performed at initial qualification and after any  
design or process changes which may affect the RHA response of the device.  
4.4.4.2 Neutron testing. Neutron testing shall be performed in accordance with test method 1017 of MIL-STD-883 and  
herein (see 1.5). All device classes must meet the post irradiation end-point electrical parameter limits as defined in table I, for  
12  
2
the subgroups specified in table IIA herein at T = +25°C 5°C after an exposure of 2 x 10 neutrons/cm (minimum).  
A
4.4.4.3 Dose rate induced latchup testing. Dose rate induced latchup testing shall be performed in accordance with test  
method 1023 of MIL-STD-883 and as specified herein (see 1.5). Tests shall be performed on devices, SEC, or approved test  
structures at technology qualification and after any design or process changes which may effect the RHA capability of the  
process.  
4.4.4.4 Dose rate burnout. When required by the customer, test shall be performed on devices, SEC, or approved test  
structures at technology qualifications and after any design or process changes which may effect the RHA capability of the  
process. Dose rate burnout shall be performed in accordance with test method 1023 of MIL-STD-883 and as specified herein.  
5. PACKAGING  
5.1 Packaging requirements. The requirements for packaging shall be in accordance with MIL-PRF-38535 for device  
classes Q and V or MIL-PRF-38535, appendix A for device class M.  
SIZE  
STANDARD  
5962-96767  
A
MICROCIRCUIT DRAWING  
DEFENSE SUPPLY CENTER COLUMBUS  
COLUMBUS, OHIO 43216-5000  
REVISION LEVEL  
SHEET  
B
13  
DSCC FORM 2234  
APR 97  
1...10111213141516...21

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