Datasheet > 5962F0721803V9A

5962F0721803V9A

更新时间： 2024-11-23 06:30:27

品牌	Logo	应用领域
英特矽尔 - INTERSIL		晶体晶体管
页数	文件大小	规格书
5页	232K
描述
Radiation Hardened Ultra High Frequency NPN/PNP Transistor Arrays

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5962F0721803V9A 数据手册

ISL73096RH, ISL73127RH, ISL73128RH

Data Sheet

March 23, 2009

FN6475.2

Radiation Hardened Ultra High Frequency

NPN/PNP Transistor Arrays

Features

• Electrically Screened to SMD # 5962-07218

The ISL73096RH, ISL73127RH and ISL73128RH are

radiation hardened bipolar transistor arrays. The

• QML Qualified per MIL-PRF-38535 Requirements

• Radiation Environment

ISL73096RH consists of three NPN transistors and two PNP

transistors on a common substrate. The ISL73127RH

consists of five NPN transistors on a common substrate. The

ISL73128RH consists of five PNP transistors on a common

substrate. One of our bonded wafer, dielectrically isolated

fabrication processes provides an immunity to Single Event

Latch-up and the capability of highly reliable performance in

any radiation environment.

- Gamma Dose (γ) . . . . . . . . . . . . . . . . . 3 x 10 RAD(Si)

- SEL Immune. . . . . . . Bonded Wafer Dielectric Isolation

• NPN Gain Bandwidth Product (F ) . . . . . . . . .8GHz (Typ)

• NPN Current Gain (h ). . . . . . . . . . . . . . . . . . . 130 (Typ)

• NPN Early Voltage (V ) . . . . . . . . . . . . . . . . . . . 50V (Typ)

• PNP Gain Bandwidth Product (F ). . . . . . . . 5.5GHz (Typ)

The high gain-bandwidth product and low noise figure of

these transistors make them ideal for use in high frequency

amplifier and mixer applications. Monolithic construction of

the NPN and PNP transistors provides the closest electrical

and thermal matching possible. Access is provided to each

terminal of the transistors for maximum application flexibility.

• PNP Current Gain (h ). . . . . . . . . . . . . . . . . . . . 60 (Typ)

• PNP Early Voltage (V ) . . . . . . . . . . . . . . . . . . . 20V (Typ)

• Noise Figure (50Ω) at 1GHz . . . . . . . . . . . . . .3.5dB (Typ)

• Collector-to-Collector Leakage. . . . . . . . . . . . . <1pA (Typ)

• Complete Isolation Between Transistors

Specifications for Rad Hard QML devices are controlled

by the Defense Supply Center in Columbus (DSCC). The

SMD numbers listed here must be used when ordering.

Applications

• High Frequency Amplifiers and Mixers

- Refer to Application Note AN9315

Detailed Electrical Specifications for these devices are

contained in SMD 5962-07218. A “hot-link” is provided

on our website for downloading.

• High Frequency Converters

• Synchronous Detector

Ordering Information

ORDERING NUMBER

INTERNAL MKT. NUMBER

ISL73096RHVX

TEMP. RANGE (°C)

-55 to +125

5962F0721801V9A

5962F0721801VXC

5962F0721802V9A

ISL73096RHVF

ISL73127RHVX

5962F0721802VXC

5962F0721803V9A

ISL73127RHVF

ISL73128RHVX

5962F0721803VXC

ISL73096RHF/PROTO

ISL73096RHX/SAMPLE

ISL73127RHF/PROTO

ISL73127RHX/SAMPLE

ISL73128RHF/PROTO

ISL73128RHX/SAMPLE

ISL73128RHVF

ISL73096RHF/PROTO

ISL73096RHX/SAMPLE

ISL73127RHF/PROTO

ISL73127RHX/SAMPLE

ISL73128RHF/PROTO

ISL73128RHX/SAMPLE

CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.

1-888-INTERSIL or 1-888-468-3774 | Intersil (and design) is a registered trademark of Intersil Americas Inc.

All other trademarks mentioned are the property of their respective owners..

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与5962F0721803V9A相关器件

型号	品牌	获取价格	描述	数据表
5962F0721803VXC	INTERSIL	获取价格	Radiation Hardened Ultra High Frequency NPN/PNP Transistor Arrays
5962F0821001KXC	CRANE	获取价格	DC-DC Regulated Power Supply Module, 1 Output, 35W, Hybrid, FM-12
5962F0821101KXC	CRANE	获取价格	DC-DC Regulated Power Supply Module, 3 Output, 30W, Hybrid, FM-12
5962F1023501K5A	INFINEON	获取价格	Regulator,
5962F1023501K6A	INFINEON	获取价格	Regulator,
5962F1023503K4A	INFINEON	获取价格	Regulator,
5962F1023503K5A	INFINEON	获取价格	Regulator,
5962F1023505K5A	INFINEON	获取价格	Regulator,
5962F1120101VXA	INFINEON	获取价格	Synchronous SRAM
5962F1120102VXA	INFINEON	获取价格	Synchronous SRAM

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