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5962F1321501VXC

更新时间： 2024-02-26 16:18:37
品牌 Logo 应用领域
瑞萨 - RENESAS /
页数 文件大小 规格书
16页 547K
描述
SPECIALTY ANALOG CIRCUIT

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5962F1321501VXC 技术参数

是否Rohs认证： 符合生命周期：Transferred
包装说明：SIP,Reach Compliance Code：compliant
HTS代码：8542.39.00.01风险等级：5.57
模拟集成电路 - 其他类型：ANALOG CIRCUITJESD-30 代码：R-CSIP-T2
长度：2.2095 mm功能数量：1
端子数量：2最高工作温度：125 °C
最低工作温度：-55 °C封装主体材料：CERAMIC, METAL-SEALED COFIRED
封装代码：SIP封装形状：RECTANGULAR
封装形式：IN-LINE峰值回流温度（摄氏度）：NOT SPECIFIED
认证状态：Not Qualified筛选级别：MIL-PRF-38535 Class Q
座面最大高度：6.862 mm最大供电电压 (Vsup)：31 V
最小供电电压 (Vsup)：4 V标称供电电压 (Vsup)：5 V
表面贴装：NO技术：BIPOLAR
温度等级：MILITARY端子形式：THROUGH-HOLE
端子位置：SINGLE处于峰值回流温度下的最长时间：NOT SPECIFIED
总剂量：300k Rad(Si) V宽度：1.1555 mm
Base Number Matches：1

5962F1321501VXC 数据手册

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Radiation Hardened, 2-Terminal Temperature Transducer  
ISL71590SEH  
Features  
The ISL71590SEH is a temperature-to-current transducer  
possessing two terminals. It has a high impedance current output  
that allows it to be insensitive to voltage drops across long lines.  
When provided a voltage between 4V and 33V, the device acts as  
a constant current regulator that generates a current equal to  
1µA/Kelvin (K).  
• 50krad(Si) low dose rate (ELDRS) shift . . . . . . . . . . . . . < 1°C  
• Linear output current . . . . . . . . . . . . . . . . . . . . . . . . . . . 1µA/K  
• Wide power supply input range. . . . . . . . . . . . . . . . 4V to 33V  
• Low power consumption . . . . . . . . . . . . . . . . . . 1.5mW at 5V  
• High output impedance provides excellent rejection to  
variations in the supply line  
The ISL71590SEH is specified over the -55°C to +125°C  
temperature range and with ±1.7°C accuracy without the  
need of additional circuitry, and also capable of operating up  
to +150°C. With power requirements as low as 1.5mW (5V at  
+25°C), it is an ideal choice for remote sensing applications as  
any well-insulated twisted pair cable will allow for proper  
operation. It can be used in several additional applications  
including temperature compensation networks, flow rate  
analysis, anemometry and biasing proportional to absolute  
temperature.  
• Additional linearization circuitry is not needed for operation  
• Operating temperature range. . . . . . . . . . . .-55°C to +150°C  
• QML qualified per MIL-PRF-38535 requirements  
• Radiation environment  
2
- SEL/SEB LET  
. . . . . . . . . . . . . . . . . . . 86.4 MeV•cm /mg  
TH  
- Total dose, high dose rate. . . . . . . . . . . . . . . . . 300krad(Si)  
- Total dose, low dose rate . . . . . . . . . . . . . . . . . 50krad(Si)*  
The high output impedance (>10MΩ) leaves plenty of room for  
variations in the power supply voltage. It is electrically durable  
as it can withstand a forward operating voltage of 33V over the  
full temperature range both under and without ion beam  
radiation and a reverse voltage of -40V.  
* Product capability established by initial characterization. The  
EH version is acceptance tested on a wafer-by-wafer basis to  
50krad(Si) at low dose rate.  
• Electrically screened to SMD# 5962-13215  
The ISL71590SEH is available in a 2 lead flatpack and die  
forms.  
Related Literature  
• AN1844, “ISL71590SEHXX Evaluation Board User’s Guide”  
• AN1895, “Total Dose Radiation Report of the ISL71590SEH”  
• AN1894, “SEE Radiation Report of the ISL71590SEH”  
Applications  
• RF power amplifier bias compensation  
• LCD bias compensation  
• Laser diode bias compensation  
• Sensor bias and linearization  
• Data acquisition systems  
+4V to +33V  
0.0  
-0.2  
-0.4  
+
T
HDR  
V
= 1mV/K  
-
OUT  
-0.6  
1kΩ  
0.1%  
ISL71590  
-0.8  
-1.0  
-1.2  
LDR  
0
25  
50  
100 125 150 200 250 300  
TOTAL DOSE (krad(Si))  
FIGURE 1. TYPICAL APPLICATION  
FIGURE 2. I  
SHIFT vs LOW/HIGH DOSE RATE RADIATION  
OUT  
September 26, 2013  
FN8376.0  
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.  
1-888-INTERSIL or 1-888-468-3774 | Copyright Intersil Americas LLC 2013. All Rights Reserved  
Intersil (and design) is a trademark owned by Intersil Corporation or one of its subsidiaries.  
All other trademarks mentioned are the property of their respective owners.  
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