Datasheet > 5962-9461111HXA

5962-9461111HXA

更新时间： 2024-02-08 21:42:03

品牌	Logo	应用领域
WEDC		静态存储器内存集成电路
页数	文件大小	规格书
40页	287K
描述
SRAM Module, 512KX32, 55ns, CMOS, CPGA66,

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技术参数
数据手册

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5962-9461111HXA 技术参数

生命周期：	Obsolete	Reach Compliance Code：	unknown
风险等级：	5.65	Is Samacsys：	N
JESD-609代码：	e0	内存集成电路类型：	SRAM MODULE
认证状态：	Not Qualified	端子面层：	TIN LEAD
Base Number Matches：	1

5962-9461111HXA 数据手册

REVISIONS

LTR

DESCRIPTION

DATE (YR-MO-DA)

99-04-22

APPROVED

Figure 1; changed case outline M to be available in either a single or

dual cavity package. Added vendor CAGE code 0EU86 for device

types 05 through 10. -sld

K. A. Cottongim

Added device types 11 through 16.

99-08-18

00-04-06

Raymond Monnin

Add note to paragraph 1.2.2 and table I, conditions. Add thermal

resistance, junction-to-case (θ_JC) for all case outlines. Add case

outline 9.

Table I, I_CCchange maximum limits and I_SBchange maximum limits.

Figure 1, case outline M, correct diagram adding "c" dimension, lead

thickness and change dimension A2 maximum from 0.020" to 0.025".

00-06-19

Raymond Monnin

Figure 1, case outline 9, minimum dimension for D2/E2, change

0.990 inches to 0.980 inches and 25.15 mm to 24.89 mm.

01-5-16

Raymond Monnin

Table I; Operating supply current (I_CC) changed the maximum limit for

device types 9 and 15 at f = 50 MHz from 700 mA to 725 mA and for

device types 10 and 16 at f = 58.8 MHz from 700 mA to 750 mA. -sld

01-12-21

Added device types 17 through 20. -sld

Added case outline A. -sld

02-11-18

03-02-24

03-12-19

04-05-03

Raymond Monnin

Added case outline B. Added note to paragraph 1.2.4. -sld

Table I; Changed the I_OLfrom 8 mA to 6 mA for device types 07-10

and 13 -20 for the V_OLtest. Editorial changes throughout. -sld

REV

SHEET

REV

SHEET

REV STATUS

OF SHEETS

REV

SHEET

PMIC N/A

PREPARED BY

Gary Zahn

DEFENSE SUPPLY CENTER COLUMBUS

STANDARD

MICROCIRCUIT

DRAWING

CHECKED BY

Michael C. Jones

COLUMBUS, OHIO 43216

http://www.dscc.dla.mil

THIS DRAWING IS

AVAILABLE

FOR USE BY ALL

DEPARTMENTS

APPROVED BY

Kendall A. Cottongim

MICROCIRCUIT, HYBRID, MEMORY,

DIGITAL, 512K x 32-BIT, STATIC RANDOM

ACCESS MEMORY, CMOS

AND AGENCIES OF THE

DEPARTMENT OF DEFENSE

DRAWING APPROVAL DATE

95-11-13

AMSC N/A

REVISION LEVEL

SIZE

CAGE CODE

67268

5962-94611

SHEET

1 OF 31

DSCC FORM 2233

APR 97

5962-E251-04

12 3 4 5 6 7...40

中文翻译

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与5962-9461111HXA相关器件

型号	品牌	获取价格	描述	数据表
5962-9461111HXC	ETC	获取价格	x32 SRAM Module
5962-9461111HXX	WEDC	获取价格	Standard SRAM, 32KX8, 70ns, CMOS, CQCC28,
5962-9461111HYC	ETC	获取价格	x32 SRAM Module
5962-9461112HAA	WEDC	获取价格	SRAM Module, 512KX32, 45ns, CMOS, CQFP68, CERAMIC, QFP-68
5962-9461112HAA	MICROSS	获取价格	SRAM Module, 512KX32, 45ns, CMOS, CQFP68, QFP-68
5962-9461112HAC	MICROSS	获取价格	SRAM Module, 512KX32, 45ns, CMOS, CQFP68, QFP-68
5962-9461112HAX	WEDC	获取价格	SRAM Module, 512KX32, 45ns, CMOS, CQFP68, CERAMIC, QFP-68
5962-9461112HMA	MICROSEMI	获取价格	SRAM Module, 512KX32, 45ns, CMOS, CQFP68, CERAMIC, QFP-68
5962-9461112HMC	ETC	获取价格	x32 SRAM Module
5962-9461112HMX	MICROSEMI	获取价格	SRAM Module, 512KX32, 45ns, CMOS, CQFP68, CERAMIC, QFP-68

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