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5962-9458505H6X PDF预览

5962-9458505H6X

更新时间: 2023-04-15 00:00:00
品牌 Logo 应用领域
美高森美 - MICROSEMI 可编程只读存储器电动程控只读存储器电可擦编程只读存储器内存集成电路
页数 文件大小 规格书
16页 1420K
描述
EEPROM Module, 128KX32, 125ns, Parallel, CMOS, CPGA66, 1.075 X 1.075 INCH, HERMETIC SEALED, CERAMIC, HIP-66

5962-9458505H6X 技术参数

生命周期:Transferred包装说明:CERAMIC, HIP-66
Reach Compliance Code:unknown风险等级:5.59
Is Samacsys:N最长访问时间:140 ns
其他特性:USER CONFIGURABLE AS 512K X 8备用内存宽度:16
JESD-30 代码:S-CPGA-P66内存密度:4194304 bit
内存集成电路类型:EEPROM MODULE内存宽度:32
功能数量:1端子数量:66
字数:131072 words字数代码:128000
工作模式:ASYNCHRONOUS最高工作温度:125 °C
最低工作温度:-55 °C组织:128KX32
封装主体材料:CERAMIC, METAL-SEALED COFIRED封装形状:SQUARE
封装形式:GRID ARRAY并行/串行:PARALLEL
编程电压:5 V认证状态:Not Qualified
筛选级别:MIL-STD-883最大供电电压 (Vsup):5.5 V
最小供电电压 (Vsup):4.5 V标称供电电压 (Vsup):5 V
表面贴装:NO技术:CMOS
温度等级:MILITARY端子形式:PIN/PEG
端子位置:PERPENDICULAR最长写入周期时间 (tWC):10 ms
Base Number Matches:1

5962-9458505H6X 数据手册

 浏览型号5962-9458505H6X的Datasheet PDF文件第2页浏览型号5962-9458505H6X的Datasheet PDF文件第3页浏览型号5962-9458505H6X的Datasheet PDF文件第4页浏览型号5962-9458505H6X的Datasheet PDF文件第5页浏览型号5962-9458505H6X的Datasheet PDF文件第6页浏览型号5962-9458505H6X的Datasheet PDF文件第7页 
WE128K32-XXX  
128Kx32 EEPROM MODULE, SMD 5962-94585  
FEATURES  
 Access Times of 125, 140, 150, 200, 250, 300ns  
 Data Polling for End of Write Detection  
 Packaging:  
 Hardware and Software Data Protection  
 TTL Compatible Inputs and Outputs  
 5 Volt Power Supply  
• 66-pin, PGA Type, 27.3mm (1.075") square, Hermetic  
Ceramic HIP (Package 400)  
• 68 lead, 22.4mm sq. CQFP (G2T), 4.57mm (0.180") high,  
(Package 509)  
 Built-in Decoupling Caps and Multiple Ground Pins for Low  
Noise Operation  
 Organized as 128Kx32; User Congurable as 256Kx16 or  
512Kx8  
 Weight  
 Write Endurance 10,000 Cycles  
WE128K32-XG2TX – 8 grams typical  
WE128K32-XH1X – 13 grams typical  
 Data Retention Ten Years Minimum (at +25°C)  
 Commercial, Industrial and Military Temperature Ranges  
 Low Power CMOS  
*This product is subject to change without notice.  
 Automatic Page Write Operation  
 Page Write Cycle Time: 10ms Max  
FIGURE 1 – PIN CONFIGURATION FOR WE128K32N-XH1X  
TOP VIEW  
PIN DESCRIPTION  
1
12  
23  
34  
45  
56  
I/O0-31  
A0-16  
WE1-4#  
CS1-4#  
OE#  
Data Input/Output  
Address Inputs  
Write Enable  
Chip Selects  
Output Enable  
Power Supply  
Ground  
I/O8  
I/O9  
I/O10  
A13  
WE2#  
CS2#  
GND  
I/O11  
A10  
I/O15  
I/O24  
I/O25  
I/O26  
A6  
VCC  
CS4#  
WE4#  
I/O27  
A3  
I/O31  
I/O30  
I/O29  
I/O28  
A0  
I/O14  
I/O13  
I/O12  
OE#  
NC  
VCC  
GND  
NC  
Not Connected  
A14  
A7  
A15  
A11  
NC  
A4  
A1  
BLOCK DIAGRAM  
A16  
A12  
WE1#  
I/O7  
A8  
A5  
A2  
WE1 # CS1#  
128K x 8  
WE2 # CS2#  
WE3 # CS3#  
WE4 # CS4#  
128K x 8  
NC  
VCC  
A9  
WE3#  
CS3#  
GND  
I/O19  
I/O23  
I/O22  
I/O21  
I/O20  
OE#  
A0-16  
I/O0  
I/O1  
I/O2  
CS1#  
NC  
I/O6  
I/O16  
I/O17  
I/O18  
128K x 8  
128K x 8  
I/O5  
I/O3  
I/O4  
8
8
8
8
11  
22  
33  
44  
55  
66  
I/O16-23  
I/O24-31  
I/O8-15  
I/O0-7  
Microsemi Corporation reserves the right to change products or specications without notice.  
May 2014 © 2014 Microsemi Corporation. All rights reserved.  
Rev. 16  
1
Microsemi Corporation • (602) 437-1520 • www.microsemi.com/pmgp  

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