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5962-9232406MXA PDF预览

5962-9232406MXA

更新时间: 2024-11-02 14:28:59
品牌 Logo 应用领域
赛普拉斯 - CYPRESS 静态存储器内存集成电路
页数 文件大小 规格书
12页 280K
描述
Non-Volatile SRAM, 8KX8, 35ns, CMOS, CDIP28, 0.300 INCH, CERAMIC, DIP-28

5962-9232406MXA 技术参数

是否Rohs认证:不符合生命周期:Obsolete
零件包装代码:DIP包装说明:0.300 INCH, CERAMIC, DIP-28
针数:28Reach Compliance Code:not_compliant
ECCN代码:3A001.A.2.CHTS代码:8542.32.00.41
风险等级:5.24Is Samacsys:N
最长访问时间:35 ns其他特性:SOFTWARE STORE/RECALL
JESD-30 代码:R-CDIP-T28JESD-609代码:e0
长度:35.56 mm内存密度:65536 bit
内存集成电路类型:NON-VOLATILE SRAM内存宽度:8
湿度敏感等级:1功能数量:1
端子数量:28字数:8192 words
字数代码:8000工作模式:ASYNCHRONOUS
最高工作温度:125 °C最低工作温度:-55 °C
组织:8KX8封装主体材料:CERAMIC, METAL-SEALED COFIRED
封装代码:DIP封装等效代码:DIP28,.3
封装形状:RECTANGULAR封装形式:IN-LINE
并行/串行:PARALLEL峰值回流温度(摄氏度):NOT SPECIFIED
电源:5 V认证状态:Not Qualified
筛选级别:MIL-STD-883座面最大高度:4.14 mm
最大待机电流:0.002 A子类别:SRAMs
最大压摆率:0.08 mA最大供电电压 (Vsup):5.5 V
最小供电电压 (Vsup):4.5 V标称供电电压 (Vsup):5 V
表面贴装:NO技术:CMOS
温度等级:MILITARY端子面层:TIN LEAD
端子形式:THROUGH-HOLE端子节距:2.54 mm
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
宽度:7.62 mmBase Number Matches:1

5962-9232406MXA 数据手册

 浏览型号5962-9232406MXA的Datasheet PDF文件第2页浏览型号5962-9232406MXA的Datasheet PDF文件第3页浏览型号5962-9232406MXA的Datasheet PDF文件第4页浏览型号5962-9232406MXA的Datasheet PDF文件第5页浏览型号5962-9232406MXA的Datasheet PDF文件第6页浏览型号5962-9232406MXA的Datasheet PDF文件第7页 
STK11C68  
STK11C68-M SMD#5962-92324  
8K x 8 nvSRAM  
QuantumTrap™ CMOS  
Nonvolatile Static RAM  
FEATURES  
DESCRIPTION  
• 25ns, 35ns, 45ns and 55ns Access Times  
The Simtek STK11C68 is a fast static RAM with a  
nonvolatile element incorporated in each static  
memory cell. The SRAM can be read and written an  
unlimited number of times, while independent non-  
volatile data resides in the Nonvolatile Elements.  
Data transfers from the SRAM to the Nonvolatile Ele-  
ments (the STORE operation), or from Nonvolatile  
Elements to SRAM (the RECALL operation), take  
place using a software sequence. Transfers from the  
Nonvolatile Elements to the SRAM (the RECALL  
operation) also take place automatically on restora-  
tion of power.  
STORE to Nonvolatile Elements Initiated by  
Software  
RECALL to SRAM Initiated by Software or  
Power Restore  
• 10mA Typical ICC at 200ns Cycle Time  
• Unlimited READ, WRITE and RECALL Cycles  
• 1,000,000 STORE Cycles to Nonvolatile Ele-  
ments (Industrial/Commercial)  
• 100-Year Data Retention (Industrial/Commer-  
cial)  
• Commercial, Industrial and Military Tempera-  
tures  
The STK11C68 is pin-compatible with industry-  
standard SRAMs. MIL-STD-883 device is also  
available (STK11C68-M).  
• 28-Pin DIP, SOIC and LCC Packages  
BLOCK DIAGRAM  
PIN CONFIGURATIONS  
1
NC  
A12  
A7  
A6  
A5  
A4  
A3  
A2  
A1  
28  
27  
26  
25  
24  
23  
22  
21  
20  
19  
18  
17  
16  
15  
VCC  
W
NC  
A8  
A9  
A11  
G
A10  
E
DQ7  
DQ6  
DQ5  
DQ4  
DQ3  
QUANTUM TRAP  
128 x 512  
2
3
4
A5  
5
STORE  
6
A6  
STORE/  
RECALL  
CONTROL  
7
A7  
8
STATIC RAM  
ARRAY  
9
RECALL  
A8  
10  
11  
12  
13  
14  
A0  
128 x 512  
DQ0  
DQ1  
DQ2  
VSS  
A9  
A11  
A12  
SOFTWARE  
DETECT  
A0 - A12  
28 - LCC  
28 - DIP  
28 - SOIC  
DQ0  
DQ1  
DQ2  
COLUMN I/O  
PIN NAMES  
COLUMN DEC  
DQ3  
DQ4  
DQ5  
DQ6  
DQ7  
A
- A  
12  
Address Inputs  
Write Enable  
Data In/Out  
Chip Enable  
Output Enable  
Power (+ 5V)  
Ground  
0
W
A0 A1 A2 A3 A4 A10  
G
DQ - DQ  
0
7
E
E
G
W
V
CC  
SS  
V
March 2006  
1
Document Control # ML0007 rev 0.2  

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