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5962-9089909MZX

更新时间： 2024-01-22 00:32:02
品牌 Logo 应用领域
其他 - ETC 闪存内存集成电路可编程只读存储器电动程控只读存储器电可擦编程只读存储器
页数 文件大小 规格书
27页 208K
描述
MICROCIRCUIT, MEMORY, DIGITAA, CMOS, 128K X 8 BIT FLASH EEPROM, MONOLITHIC SILICON

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5962-9089909MZX 技术参数

生命周期：Obsolete零件包装代码：QFP
包装说明：QFP,针数：32
Reach Compliance Code：unknownECCN代码：3A001.A.2.C
HTS代码：8542.32.00.51风险等级：5.74
Is Samacsys：N最长访问时间：90 ns
JESD-30 代码：R-CQFP-G32长度：13.97 mm
内存密度：1048576 bit内存集成电路类型：FLASH
内存宽度：8功能数量：1
端子数量：32字数：131072 words
字数代码：128000工作模式：ASYNCHRONOUS
最高工作温度：125 °C最低工作温度：-55 °C
组织：128KX8封装主体材料：CERAMIC, METAL-SEALED COFIRED
封装代码：QFP封装形状：RECTANGULAR
封装形式：FLATPACK并行/串行：PARALLEL
编程电压：12 V认证状态：Not Qualified
筛选级别：MIL-STD-883座面最大高度：4.04 mm
最大供电电压 (Vsup)：5.5 V最小供电电压 (Vsup)：4.5 V
标称供电电压 (Vsup)：5 V表面贴装：YES
技术：CMOS温度等级：MILITARY
端子形式：GULL WING端子节距：1.27 mm
端子位置：QUAD宽度：11.43 mm
Base Number Matches：1

5962-9089909MZX 数据手册

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6.1.2 Substitutability. Device class Q devices will replace device class M devices.  
6.2 Configuration control of SMD's. All proposed changes to existing SMD's will be coordinated with the users of record for  
the individual documents. This coordination will be accomplished in accordance with MIL-STD-973 using DD Form 1692,  
Engineering Change Proposal.  
6.3 Record of users. Military and industrial users should inform Defense Supply Center Columbus when a system  
application requires configuration control and which SMD's are applicable to that system. DSCC will maintain a record of users  
and this list will be used for coordination and distribution of changes to the drawings. Users of drawings covering  
microelectronic devices (FSC 5962) should contact DSCC-VA, telephone (614) 692-0525.  
6.4 Comments. Comments on this drawing should be directed to DSCC-VA, Columbus, Ohio 43216-5000, or telephone  
(614) 692-0674.  
6.5 Abbreviations, symbols, and definitions. The abbreviations, symbols, and definitions used herein are defined in MIL-  
PRF-38535, MIL-STD-1331, and as follows:  
C
, C  
. . . . . . . . . . . . . . Input and bidirectional output, terminal-to-GND capacitance.  
IN OUT  
GND . . . . . . . . . . . . . . . . . . . . Ground zero voltage potential.  
I
I
I
T
T
. . . . . . . . . . . . . . . . . . . . . Supply current.  
CC  
IL  
IH  
C
A
. . . . . . . . . . . . . . . . . . . . . . Input current low.  
. . . . . . . . . . . . . . . . . . . . . Input current high.  
. . . . . . . . . . . . . . . . . . . . . Case temperature.  
. . . . . . . . . . . . . . . . . . . . . Ambient temperature.  
. . . . . . . . . . . . . . . . . . . . Positive supply voltage.  
V
V
CC  
. . . . . . . . . . . . . . . . . . . . . Output enable and Write enable voltage during chip erase.  
H
O/V . . . . . . . . . . . . . . . . . . . . . Latchup over-voltage.  
6.5.1 Timing limits. The table of timing values shows either a minimum or a maximum limit for each parameter. Input  
requirements are specified from the external system point of view. Thus, address setup time is shown as a minimum since the  
system must supply at least that much time (even though most devices do not require it). On the other hand, responses from  
the memory are specified from the device point of view. Thus, the access time is shown as a maximum since the device never  
provides data later than that time.  
6.5.2 Timing parameter abbreviations. All timing abbreviations use lower case characters with upper case subscripts. The  
initial character is always "t" and is followed by four descriptors. These characters specify two signal points arranged in a "from-  
to" sequence that define a timing interval. The two descriptors for each signal specify the signal name and the signal transition.  
Thus the format is:  
t
X
X
X
X
Signal name from which interval is defined  
Transition direction for first signal  
Signal name to which interval is defined  
Transition direction for second signal  
a. Signal definitions:  
b. Transition definitions:  
A = Address  
H = Transition to high  
D = Data in  
L = Transition to low  
Q = Data out  
V = Transition to valid  
W = Write enable  
E = Chip enable  
G = Output enable  
X = Transition to invalid or don't care  
Z = Transition to off (high impedance)  
SIZE  
STANDARD  
MICROCIRCUIT DRAWING  
5962-90899  
A
DEFENSE SUPPLY CENTER COLUMBUS  
COLUMBUS, OHIO 43216-5000  
REVISION LEVEL  
C
SHEET  
23  
DSCC FORM 2234  
APR 97  
1...2021222324252627

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 		x8 Flash EEPROM
5962-9089911MXX ETC

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 		MICROCIRCUIT, MEMORY, DIGITAA, CMOS, 128K X 8 BIT FLASH EEPROM, MONOLITHIC SILICON
5962-9089911MYA ETC

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 		x8 Flash EEPROM

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