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5962-9089909MZX PDF预览

5962-9089909MZX

更新时间： 2024-02-02 14:14:56
品牌 Logo 应用领域
其他 - ETC 闪存内存集成电路可编程只读存储器电动程控只读存储器电可擦编程只读存储器
页数 文件大小 规格书
27页 208K
描述
MICROCIRCUIT, MEMORY, DIGITAA, CMOS, 128K X 8 BIT FLASH EEPROM, MONOLITHIC SILICON

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5962-9089909MZX 技术参数

生命周期：Obsolete零件包装代码：QFP
包装说明：QFP,针数：32
Reach Compliance Code：unknownECCN代码：3A001.A.2.C
HTS代码：8542.32.00.51风险等级：5.74
Is Samacsys：N最长访问时间：90 ns
JESD-30 代码：R-CQFP-G32长度：13.97 mm
内存密度：1048576 bit内存集成电路类型：FLASH
内存宽度：8功能数量：1
端子数量：32字数：131072 words
字数代码：128000工作模式：ASYNCHRONOUS
最高工作温度：125 °C最低工作温度：-55 °C
组织：128KX8封装主体材料：CERAMIC, METAL-SEALED COFIRED
封装代码：QFP封装形状：RECTANGULAR
封装形式：FLATPACK并行/串行：PARALLEL
编程电压：12 V认证状态：Not Qualified
筛选级别：MIL-STD-883座面最大高度：4.04 mm
最大供电电压 (Vsup)：5.5 V最小供电电压 (Vsup)：4.5 V
标称供电电压 (Vsup)：5 V表面贴装：YES
技术：CMOS温度等级：MILITARY
端子形式：GULL WING端子节距：1.27 mm
端子位置：QUAD宽度：11.43 mm
Base Number Matches：1

5962-9089909MZX 数据手册

 浏览型号5962-9089909MZX的Datasheet PDF文件第19页浏览型号5962-9089909MZX的Datasheet PDF文件第20页浏览型号5962-9089909MZX的Datasheet PDF文件第21页浏览型号5962-9089909MZX的Datasheet PDF文件第23页浏览型号5962-9089909MZX的Datasheet PDF文件第24页浏览型号5962-9089909MZX的Datasheet PDF文件第25页 
TABLE IIB. Delta limits at 25 C.  
Test 1/  
Device types  
All  
I
±10 percent of specified value  
in table I.  
CCS2  
standby  
I
±10 percent of specified value  
in table I.  
LI  
I
±10 percent of specified value  
in table I.  
LO  
1/ The above parameter shall be recorded before and after  
the required burn-in and life tests to determine delta.  
4.4.4 Group E inspection. Group E inspection is required only for parts intended to be marked as radiation hardness  
assured (see 3.5 herein). RHA levels for device classes M, Q, and V shall be as specified in MIL-PRF-38535.  
a. End-point electrical parameters shall be as specified in table IIA herein.  
b. For device classes Q and V, the devices or test vehicle shall be subjected to radiation hardness assured tests as  
specified in MIL-PRF-38535 for the RHA level being tested. For device class M, the devices shall be subjected to  
radiation hardness assured tests as specified in MIL-PRF-38535, appendix A for the RHA level being tested. All  
device classes must meet the postirradiation end-point electrical parameter limits as defined in table IA at T = +25 C  
A
±5 C, after exposure, to the subgroups specified in table IIA herein.  
c. When specified in the purchase order or contract, a copy of the RHA delta limits shall be supplied.  
4.5 Methods of inspection. Methods of inspection shall be as specified in the appropriate figures and tables as follows.  
4.5.1 Erasing procedures. The erasing procedures shall be as specified by the device manufacturer and shall be available  
upon request.  
4.5.2 Programming procedure. The programming procedures shall be as specified by the device manufacturer and shall be  
made available upon request.  
4.6 Delta measurements for device class V. Delta measurements, as specified in table IIA, shall be made and recorded  
before and after the required burn-in screens and steady-state life tests to determine delta compliance. The electrical  
parameters to be measured, with associated delta limits are listed in table IIB. The device manufacturer may, at his option,  
either perform delta measurements or within 24 hours after burn-in perform final electrical parameter tests, subgroups 1, 7, and  
9.  
5. PACKAGING  
5.1 Packaging requirements. The requirements for packaging shall be in accordance with MIL-PRF-38535 for device  
classes Q and V or MIL-PRF-38535, appendix A for device class M.  
6. NOTES  
6.1 Intended use. Microcircuits conforming to this drawing are intended for use for Government microcircuit applications  
(original equipment), design applications, and logistics purposes.  
6.1.1 Replaceability. Microcircuits covered by this drawing will replace the same generic device covered by a  
contractor-prepared specification or drawing.  
SIZE  
STANDARD  
5962-90899  
A
MICROCIRCUIT DRAWING  
DEFENSE SUPPLY CENTER COLUMBUS  
REVISION LEVEL  
C
SHEET  
COLUMBUS, OHIO 43216-5000  
22  
DSCC FORM 2234  
APR 97  
1...19202122232425...27

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5962-9089910QXA ETC MICROCIRCUIT, MEMORY, DIGITAA, CMOS, 128K X 8 BIT FLASH EEPROM, MONOLITHIC SILICON

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