SRAM
MT5C6404
16K x 4 SRAM
SRAM MEMORY ARRAY
PIN ASSIGNMENT
(Top View)
22-Pin DIP (C)
(300 MIL)
AVAILABLE AS MILITARY
SPECIFICATIONS
• SMD 5962-86859
• SMD 5962-89692
A5
A6
A7
A8
A9
A10
A11
A12
A13
CE\ 10
Vss 11
1
2
3
4
5
6
7
8
9
22
21
20
19
18
17
16
15
14
13
12
Vcc
A4
A3
A2
A1
•
MIL-STD-883
A0
DQ4
DQ3
DQ2
DQ1
WE\
FEATURES
• Speeds: 12, 15, 20, 25, 35, 45, 55, and 70ns
• Battery Backup: 2V data retention
• High-performance, low-power CMOS double-metal
process
• Single +5V (+10%) Power Supply
• Easy memory expansion with CE\
• All inputs and outputs are TTL compatible
GENERAL DESCRIPTION
The Micross Components SRAM family employs high-speed,
low-power CMOS designs using a four-transistor memory cell.
Austin Semiconductor SRAMs are fabricated using double-
layer metal, double-layer polysilicon technology.
For flexibility in high-speed memory applications, Micross
Components offers chip enable (CE\) on all organizations. This
enhancement can place the outputs in High-Z for additional
flexibility in system design.
Writing to these devices is accomplished when write enable
(WE\) and CE\ inputs are both LOW. Reading is accomplished
when WE\ remains HIGH and CE\ goes LOW. The device of-
fers a reduced power standby mode when disabled. This allows
system designs to achieve low standby power requirements.
All devices operate from a single +5V power supply and all
inputs and outputs are fully TTL compatible.
OPTIONS
• Timing
MARKING
12ns access
15ns access
20ns access
25ns access
35ns access
45ns access
55ns access
70ns access
-12
-15
-20
-25
-35
-45*
-55*
-70*
• Package(s)
Ceramic DIP (300 mil) C
No. 105
• Operating Temperature Ranges
Industrial (-40oC to +85oC)
IT
Military (-55oC to +125oC)
XT
• 2V data retention/low power
L
For more products and information
please visit our web site at
www.micross.com
*Electrical characteristics identical to those provided for the 35ns ac-
cess devices.
Micross Components reserves the right to change products or specifications without notice.
MT5C6404
Rev. 1.2 01/10
1