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5962-8852512XX PDF预览

5962-8852512XX

更新时间: 2024-01-04 00:36:10
品牌 Logo 应用领域
XICOR 可编程只读存储器电动程控只读存储器电可擦编程只读存储器内存集成电路
页数 文件大小 规格书
28页 238K
描述
EEPROM, 32KX8, 200ns, Parallel, CMOS, CDIP28, CERAMIC, DIP-28

5962-8852512XX 技术参数

生命周期:Obsolete包装说明:DIP,
Reach Compliance Code:unknown风险等级:5.65
最长访问时间:200 nsJESD-30 代码:R-GDIP-T28
内存密度:262144 bit内存集成电路类型:EEPROM
内存宽度:8功能数量:1
端子数量:28字数:32768 words
字数代码:32000工作模式:ASYNCHRONOUS
最高工作温度:125 °C最低工作温度:-55 °C
组织:32KX8封装主体材料:CERAMIC, GLASS-SEALED
封装代码:DIP封装形状:RECTANGULAR
封装形式:IN-LINE并行/串行:PARALLEL
编程电压:5 V认证状态:Not Qualified
筛选级别:MIL-STD-883 Class B座面最大高度:5.9 mm
最大供电电压 (Vsup):5.5 V最小供电电压 (Vsup):4.5 V
标称供电电压 (Vsup):5 V表面贴装:NO
技术:CMOS温度等级:MILITARY
端子形式:THROUGH-HOLE端子节距:2.54 mm
端子位置:DUAL宽度:15.24 mm
最长写入周期时间 (tWC):10 msBase Number Matches:1

5962-8852512XX 数据手册

 浏览型号5962-8852512XX的Datasheet PDF文件第19页浏览型号5962-8852512XX的Datasheet PDF文件第20页浏览型号5962-8852512XX的Datasheet PDF文件第21页浏览型号5962-8852512XX的Datasheet PDF文件第23页浏览型号5962-8852512XX的Datasheet PDF文件第24页浏览型号5962-8852512XX的Datasheet PDF文件第25页 
(3) Read the pattern after bake and perform endpoint electrical tests for table II herein for group C.  
4.3.3 Groups D inspections. Group D inspection shall be in accordance with table IV of method 5005 of MIL-STD-883 and as  
follows:  
a. End-point electrical parameters shall be as specified in table II herein.  
b. All devices requiring end-point electrical testing shall be programmed with a checkerboard or equivalent alternating bit  
pattern.  
TABLE II. Electrical test requirements. 1/ 2/ 3/ 4/ 5/  
MIL-STD-883 test requirements  
Subgroups  
(in accordance with  
MIL-STD-883, method 5005,  
table I)  
Interim electrical parameters  
(method 5004)  
1, 7, 9 or 2, 8A, 10  
1*, 2, 3, 7*, 8, 9, 10, 11  
1, 2, 3, 4**, 7, 8, 9, 10, 11  
1, 2, 3, 7, 8, 9, 10 ,11  
Final electrical test parameters  
(method 5004)  
Group A test requirements  
(method 5005)  
Groups C and D end-point  
electrical parameters  
(method 5005)  
1/ (*) Indicates PDA applies to subgroups 1 and 7.  
2/ Any or all subgroups may be combined when using multifunction testers.  
3/ Subgroup 7 and 8 shall consist of writing and reading the data pattern specified  
in accordance with the limits of table I subgroups 9, 10, and 11.  
4/ For all electrical tests, the device shall be programmed to the data pattern specified.  
5/ (**) Indicates that subgroup 4 will only be performed during initial qualification and after  
design or process changes (see 4.3.1c).  
4.4 Methods of inspection. Methods of inspection shall be as specified in the appropriate tables of method 5005 of  
MIL-STD-883 and as follows.  
4.4.1 Voltage and current. All voltages given are referenced to the microcircuit VSS terminal. Currents given are conventional  
current and positive when flowing into the referenced terminal.  
4.4.2 Programming procedure. The following procedure shall be followed when programming (Write) is performed. The  
waveforms and timing relationships shown on figure 5 (in accordance with appropriate device type) and the conditions specified  
in table I shall be adhered to. Information is introduced by selectively programming a TTL low or TTL high on each I/O of the  
address desired. Functionality shall be verified at all temperatures (group A subgroups 7 and 8) by programming all bytes of  
each device and verifying the pattern used.  
4.4.3 Erasing procedure. There are two forms of erasure, chip and byte, whereby all bits or the address selected will be  
erased to a TTL high.  
a. Chip erase is performed in accordance with the waveforms and timing relationships shown on figure 8 (in accordance  
with appropriate device type) and the conditions specified in table I.  
SIZE  
STANDARD  
5962-88525  
A
MICROCIRCUIT DRAWING  
DEFENSE SUPPLY CENTER COLUMBUS  
COLUMBUS, OHIO 43218-3990  
REVISION LEVEL  
SHEET  
D
22  
DSCC FORM 2234  
APR 97  

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