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5962-8852513YX PDF预览

5962-8852513YX

更新时间: 2024-02-07 04:50:13
品牌 Logo 应用领域
XICOR 可编程只读存储器电动程控只读存储器电可擦编程只读存储器ATM异步传输模式内存集成电路
页数 文件大小 规格书
28页 238K
描述
EEPROM, 32KX8, 250ns, Parallel, CMOS, CQCC32, CERAMIC, LCC-32

5962-8852513YX 技术参数

生命周期:Obsolete包装说明:QCCN,
Reach Compliance Code:unknown风险等级:5.64
Is Samacsys:N最长访问时间:250 ns
JESD-30 代码:R-CQCC-N32长度:13.965 mm
内存密度:262144 bit内存集成电路类型:EEPROM
内存宽度:8功能数量:1
端子数量:32字数:32768 words
字数代码:32000工作模式:ASYNCHRONOUS
最高工作温度:125 °C最低工作温度:-55 °C
组织:32KX8封装主体材料:CERAMIC, METAL-SEALED COFIRED
封装代码:QCCN封装形状:RECTANGULAR
封装形式:CHIP CARRIER并行/串行:PARALLEL
编程电压:5 V认证状态:Not Qualified
筛选级别:MIL-STD-883座面最大高度:3.05 mm
最大供电电压 (Vsup):5.5 V最小供电电压 (Vsup):4.5 V
标称供电电压 (Vsup):5 V表面贴装:YES
技术:CMOS温度等级:MILITARY
端子形式:NO LEAD端子节距:1.27 mm
端子位置:QUAD宽度:11.425 mm
最长写入周期时间 (tWC):10 msBase Number Matches:1

5962-8852513YX 数据手册

 浏览型号5962-8852513YX的Datasheet PDF文件第2页浏览型号5962-8852513YX的Datasheet PDF文件第3页浏览型号5962-8852513YX的Datasheet PDF文件第4页浏览型号5962-8852513YX的Datasheet PDF文件第5页浏览型号5962-8852513YX的Datasheet PDF文件第6页浏览型号5962-8852513YX的Datasheet PDF文件第7页 
REVISIONS  
LTR  
A
DESCRIPTION  
DATE (YR-MO-DA)  
92-01-27  
APPROVED  
M. A. Frye  
M. A. Frye  
Add "Changes in accordance with NOR 5962-R115-92."  
B
Add software data protection. Increase data retention to 20 years,  
93-07-21  
minimum. Add device types 08 through 16. Remove tests tDHWL  
WHDX, and ESDS requirements from drawing.  
,
t
C
D
Add "Changes in accordance with NOR 5962-R071-95."  
Updated boilerplate paragraphs. ksr  
95-02-14  
05-04-15  
M. A. Frye  
Raymond Monnin  
The original first page has been replaced.  
REV  
SHEET  
REV  
D
D
D
D
D
D
D
21  
D
D
22  
D
D
23  
D
SHEET  
15  
16  
17  
18  
19  
20  
REV STATUS  
OF SHEETS  
REV  
D
4
D
5
D
6
D
7
D
8
D
9
D
D
D
D
D
SHEET  
1
2
3
10  
11  
12  
13  
14  
PMIC N/A  
PREPARED BY  
Kenneth Rice  
CHECKED BY  
DEFENSE SUPPLY CENTER COLUMBUS  
STANDARD  
MICROCIRCUIT  
DRAWING  
COLUMBUS, OHIO 43218-3990  
http://www.dscc.dla.mil  
Raymond Monnin  
APPROVED BY  
Michael A. Frye  
THIS DRAWING IS  
AVAILABLE  
MICROCIRCUIT, MEMORY,  
DIGITAL, CMOS 32K X 8  
EEPROM, MONOLITHIC  
SILICON  
FOR USE BY ALL  
DEPARTMENTS  
DRAWING APPROVAL DATE  
88-08-29  
AND AGENCIES OF THE  
DEPARTMENT OF DEFENSE  
AMSC N/A  
REVISION LEVEL  
D
SIZE  
A
CAGE CODE  
5962-88525  
67268  
SHEET  
1 OF 23  
DSCC FORM 2233  
APR 97  
.
5962-E286-05  

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