Datasheet > 5962-3826701MTX

5962-3826701MTX

更新时间： 2024-02-08 02:34:15

品牌	Logo	应用领域
美国微芯 - MICROCHIP		可编程只读存储器电动程控只读存储器电可擦编程只读存储器内存集成电路
页数	文件大小	规格书
17页	435K
描述
EEPROM, 128KX8, 250ns, Parallel, CMOS, CPGA30

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5962-3826701MTX 技术参数

生命周期：	Obsolete	包装说明：	PGA-30
Reach Compliance Code：	compliant	ECCN代码：	3A001.A.2.C
HTS代码：	8542.32.00.51	风险等级：	5.67
最长访问时间：	250 ns	JESD-30 代码：	R-CPGA-P30
长度：	16.5 mm	内存密度：	1048576 bit
内存集成电路类型：	EEPROM	内存宽度：	8
功能数量：	1	端子数量：	30
字数：	131072 words	字数代码：	128000
工作模式：	ASYNCHRONOUS	最高工作温度：	125 °C
最低工作温度：	-55 °C	组织：	128KX8
封装主体材料：	CERAMIC, METAL-SEALED COFIRED	封装代码：	PGA
封装形状：	RECTANGULAR	封装形式：	GRID ARRAY
并行/串行：	PARALLEL	编程电压：	5 V
认证状态：	Not Qualified	筛选级别：	MIL-STD-883 Class C
座面最大高度：	4.4 mm	最大供电电压 (Vsup)：	5.5 V
最小供电电压 (Vsup)：	4.5 V	标称供电电压 (Vsup)：	5 V
表面贴装：	NO	技术：	CMOS
温度等级：	MILITARY	端子形式：	PIN/PEG
端子节距：	2.54 mm	端子位置：	PERPENDICULAR
宽度：	14 mm	最长写入周期时间 (tWC)：	10 ms
Base Number Matches：	1

5962-3826701MTX 数据手册

Description

The AT28C010 is a high-performance Electrically Erasable and Programmable Read Only Mem-

ory. Its one megabit of memory is organized as 131,072 words by 8 bits. Manufactured with

Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 120 ns with

power dissipation of just 440 mW. When the device is deselected, the CMOS standby current is

less than 300A.

The AT28C010 is accessed like a Static RAM for the read or write cycle without the need for

external components. The device contains a 128-byte page register to allow writing of up to 128-

bytes simultaneously. During a write cycle, the address and 1 to 128-bytes of data are internally

latched, freeing the address and data bus for other operations. Following the initiation of a write

cycle, the device will automatically write the latched data using an internal control timer. The end

of a write cycle can be detected by DATA POLLING of I/O7. Once the end of a write cycle has

been detected a new access for a read or write can begin.

Atmel's 28C010 has additional features to ensure high quality and manufacturability. The device

utilizes internal error correction for extended endurance and improved data retention character-

istics. An optional software data protection mechanism is available to guard against inadvertent

writes. The device also includes an extra 128-bytes of EEPROM for device identification or

tracking.

Block Diagram

Absolute Maximum Ratings*

*NOTICE:

Stresses beyond those listed under “Absolute

Maximum Ratings” may cause permanent dam-

age to the device. This is a stress rating only and

functional operation of the device at these or any

other conditions beyond those indicated in the

operational sections of this specification is not

implied. Exposure to absolute maximum rating

conditions for extended periods may affect device

reliability.

Temperature Under Bias ............................... -55°C to +125°C

Storage Temperature..................................... -65°C to +150°C

All Input Voltages

(including NC Pins)

with Respect to Ground ...................................-0.6V to +6.25V

All Output Voltages

with Respect to Ground .............................-0.6V to V_CC+ 0.6V

Voltage on OE and A9

with Respect to Ground ...................................-0.6V to +13.5V

AT28C010 Military

Atmel-0010I-PEEPR-AT28C010-Datasheet_062015

123 4 5 6 7...17

中文翻译

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与5962-3826701MTX相关器件

型号	品牌	获取价格	描述	数据表
5962-3826701MUA	XICOR	获取价格	EEPROM, 128KX8, 250ns, Parallel, CMOS, CQCC32, CERAMIC, LCC-32
5962-3826701MUM	MAXWELL	获取价格	MICROCIRCUIT, MEMORY, DIGITAL, CMOS 128K x 8 BIT EEPROM, MONOLITHIC SILICON
5962-3826701MUQ	MAXWELL	获取价格	MICROCIRCUIT, MEMORY, DIGITAL, CMOS 128K x 8 BIT EEPROM, MONOLITHIC SILICON
5962-3826701MUV	MAXWELL	获取价格	MICROCIRCUIT, MEMORY, DIGITAL, CMOS 128K x 8 BIT EEPROM, MONOLITHIC SILICON
5962-3826701MUX	ATMEL	获取价格	1-Megabit (128K x 8) Paged Parallel EEPROMs
5962-3826701MUX	MICROCHIP	获取价格	EEPROM, 128KX8, 250ns, Parallel, CMOS, CQCC32
5962-3826701MWC	ETC	获取价格	x8 EEPROM
5962-3826701MWM	MAXWELL	获取价格	MICROCIRCUIT, MEMORY, DIGITAL, CMOS 128K x 8 BIT EEPROM, MONOLITHIC SILICON
5962-3826701MWQ	MAXWELL	获取价格	MICROCIRCUIT, MEMORY, DIGITAL, CMOS 128K x 8 BIT EEPROM, MONOLITHIC SILICON
5962-3826701MWV	MAXWELL	获取价格	MICROCIRCUIT, MEMORY, DIGITAL, CMOS 128K x 8 BIT EEPROM, MONOLITHIC SILICON

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