Datasheet > 580-22.0M-315G

580-22.0M-315G

更新时间： 2024-11-09 06:28:03

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Clipped Sine Wave

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580-22.0M-315G 数据手册

Oscilent Corporation | 580 Series TCXO - Temperature Compensated Crystal Oscillator ... Page 1 of 2

VCTCXO

Series Number

Package

Description

Last Modified

580

11.8 x 9.9 (4 Pad SMD)

Clipped Sine Wave

Jan. 01 2007

FEATURES

- High stable output over wide temperature range

- 2.2mm height max low profile VCTCXO

- Industry standard 11.8 x 9.9mm 4 Pad

- RoHs / Lead Free compliant

OPERATING CONDITIONS / ELECTRICAL CHARACTERISTICS

PARAMETERS

Output Waveform

Input Voltage (VDD)

CONDITIONS

CHARACTERISTICS

Clipped Sine Wave

UNITS

3.0 and 3.3 (optional)

5.0 ±10%

VDC

10.00 ~ 26.00

-30 ~ +85

MHz

°C

Frequency Range (f )

Operating Temperature (T

Storage Temperature (T

)

OPR

)

-40 ~ +120

°C

STG

at room temperature

-30 ~ +85°C

VDD ±5%

RL ±5%

±2.5 max.

±0.3 max.

0.2 max.

10 (Typ.)

PPM

Frequency Tolerance

Temperature Stability

Input Voltage Stability

Load Stability

Load Capacitance

2 max.

Input Current (I

Aging

Frequency Deviation

Control Voltage Range

Output Voltage

)

@ 25°C

@ VC & ±10 PPM (Typ.)

±1 max.

PPM/Y

PPM

VDC

±3.0 min.

0.5 ~ 2.5

0.5 ~ 4.5

1 P-P min.

Clipped Sine Wave

0.7 P-P min.

4 max.

Start-Up Time (T )

2nd Harmonic

3rd Harmonic

Other

-3 max.

-6 max.

dBc

Harmonics

-10 max.

-80 max.

-125 max.

-145 max.

-148 max.

-150 max.

@ 10 Hz offset

@ 100 Hz offset

@ 1 KHz offset

@ 10 KHz offset

@ 100 KHz offset

dBc/Hz

Phase Noise (Typ.)

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