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50WQ10FN PDF预览

50WQ10FN

更新时间: 2024-11-09 06:29:27
品牌 Logo 应用领域
威世 - VISHAY 整流二极管
页数 文件大小 规格书
6页 112K
描述
Schottky Rectifier, 5.5 A

50WQ10FN 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:TO-252AA包装说明:R-PSSO-G2
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:5.13其他特性:FREE WHEELING DIODE, HIGH RELIABILITY
应用:GENERAL PURPOSE外壳连接:CATHODE
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):0.87 V
JEDEC-95代码:TO-252AAJESD-30 代码:R-PSSO-G2
湿度敏感等级:1最大非重复峰值正向电流:330 A
元件数量:1相数:1
端子数量:2最高工作温度:150 °C
最低工作温度:-40 °C最大输出电流:5.5 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
认证状态:Not Qualified最大重复峰值反向电压:100 V
子类别:Rectifier Diodes表面贴装:YES
技术:SCHOTTKY端子形式:GULL WING
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

50WQ10FN 数据手册

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50WQ10FNPbF  
Vishay High Power Products  
Schottky Rectifier, 5.5 A  
FEATURES  
• Popular D-PAK outline  
• Small foot print, surface mountable  
• Low forward voltage drop  
• High frequency operation  
Available  
Base  
cathode  
RoHS*  
COMPLIANT  
4, 2  
• Guard ring for enhanced ruggedness and long term  
reliability  
3
1
• Lead (Pb)-free (“PbF” suffix)  
Anode  
D-PAK  
Anode  
• Designed and qualified for AEC Q101 level  
DESCRIPTION  
The 50WQ10FNPbF surface mount Schottky rectifier has  
been designed for applications requiring low forward drop  
and small foot prints on PC board. Typical applications are in  
disk drives, switching power supplies, converters,  
freewheeling diodes, battery charging, and reverse battery  
protection.  
PRODUCT SUMMARY  
IF(AV)  
5.5 A  
VR  
100 V  
MAJOR RATINGS AND CHARACTERISTICS  
SYMBOL  
IF(AV)  
VRRM  
IFSM  
CHARACTERISTICS  
VALUES  
5.5  
UNITS  
Rectangular waveform  
A
V
100  
tp = 5 µs sine  
5 Apk, TJ = 125 °C  
Range  
330  
A
VF  
0.63  
V
TJ  
- 40 to 150  
°C  
VOLTAGE RATINGS  
PARAMETER  
SYMBOL  
50WQ10FNPbF  
UNITS  
Maximum DC reverse voltage  
VR  
100  
V
Maximum working peak reverse voltage  
VRWM  
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
50 % duty cycle at TC = 135 °C, rectangular waveform  
VALUES UNITS  
Maximum average forward current  
See fig. 5  
IF(AV)  
5.5  
A
Maximum peak one cycle  
non-repetitive surge current  
See fig. 7  
Following any rated load  
condition and with rated  
RRM applied  
5 µs sine or 3 µs rect. pulse  
330  
IFSM  
10 ms sine or 6 ms rect. pulse  
110  
V
Non-repetitive avalanche energy  
Repetitive avalanche current  
EAS  
IAR  
TJ = 25 °C, IAS = 0.5 A, L = 40 mH  
6.0  
0.5  
mJ  
A
Current decaying linearly to zero in 1 µs  
Frequency limited by TJ maximum VA = 1.5 x VR typical  
* Pb containing terminations are not RoHS compliant, exemptions may apply  
Document Number: 94235  
Revision: 21-Apr-08  
For technical questions, contact: diodes-tech@vishay.com  
www.vishay.com  
1

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