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50RIA40PBF PDF预览

50RIA40PBF

更新时间: 2024-02-05 11:06:56
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
7页 151K
描述
Silicon Controlled Rectifier, 80A I(T)RMS, 400V V(DRM), 400V V(RRM), 1 Element, TO-208AC, TO-65, 2 PIN

50RIA40PBF 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Transferred零件包装代码:TO-65
包装说明:POST/STUD MOUNT, O-MUPM-D2针数:2
Reach Compliance Code:compliantHTS代码:8541.30.00.80
风险等级:5.11配置:SINGLE
关态电压最小值的临界上升速率:500 V/us最大直流栅极触发电流:100 mA
最大直流栅极触发电压:2.5 VJEDEC-95代码:TO-208AC
JESD-30 代码:O-MUPM-D2元件数量:1
端子数量:2最高工作温度:125 °C
最低工作温度:-40 °C封装主体材料:METAL
封装形状:ROUND封装形式:POST/STUD MOUNT
峰值回流温度(摄氏度):260认证状态:Not Qualified
最大均方根通态电流:80 A断态重复峰值电压:400 V
重复峰值反向电压:400 V表面贴装:NO
端子形式:SOLDER LUG端子位置:UPPER
处于峰值回流温度下的最长时间:40触发设备类型:SCR
Base Number Matches:1

50RIA40PBF 数据手册

 浏览型号50RIA40PBF的Datasheet PDF文件第1页浏览型号50RIA40PBF的Datasheet PDF文件第3页浏览型号50RIA40PBF的Datasheet PDF文件第4页浏览型号50RIA40PBF的Datasheet PDF文件第5页浏览型号50RIA40PBF的Datasheet PDF文件第6页浏览型号50RIA40PBF的Datasheet PDF文件第7页 
50RIA Series  
Medium Power Thyristors  
(Stud Version), 50 A  
Vishay High Power Products  
ELECTRICAL SPECIFICATIONS  
VOLTAGE RATINGS  
VDRM/VRRM, MAXIMUM  
REPETITIVE PEAK AND  
OFF-STATE VOLTAGE (1)  
V
VRSM, MAXIMUM NON-REPETITIVE  
IDRM/IRRM MAXIMUM  
AT TJ = TJ MAXIMUM  
mA  
VOLTAGE  
CODE  
TYPE NUMBER  
PEAK VOLTAGE (2)  
V
10  
20  
100  
200  
150  
300  
40  
400  
500  
50RIA  
15  
60  
600  
700  
80  
800  
900  
100  
120  
1000  
1200  
1100  
1300  
Notes  
(1)  
Units may be broken over non-repetitively in the off-state direction without damage, if dI/dt does not exceed 20 A/µs  
For voltage pulses with tp 5 ms  
(2)  
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
180° sinusoidal conduction  
VALUES  
UNITS  
50  
94  
A
°C  
A
Maximum average on-state current  
at case temperature  
IT(AV)  
Maximum RMS on-state current  
IT(RMS)  
80  
t = 10 ms  
t = 8.3 ms  
t = 10 ms  
t = 8.3 ms  
t = 10 ms  
t = 8.3 ms  
t = 10 ms  
t = 8.3 ms  
1430  
1490  
1200  
1255  
10.18  
9.30  
7.20  
6.56  
No voltage  
reapplied  
Maximum peak, one-cycle  
non-repetitive surge current  
ITSM  
A
100 % VRRM  
reapplied  
Sinusoidal half wave,  
initial TJ = TJ maximum  
No voltage  
reapplied  
Maximum I2t for fusing  
I2t  
kA2s  
100 % VRRM  
reapplied  
t = 0.1 to 10 ms, no voltage reapplied,  
TJ = TJ maximum  
Maximum I2t for fusing  
I2t  
101.8  
kA2s  
Low level value of threshold voltage  
High level value of threshold voltage  
VT(TO)1  
VT(TO)2  
(16.7 % x π x IT(AV) < I < π x IT(AV)), TJ = TJ maximum  
(π x IT(AV) < I < 20 x π x IT(AV)), TJ = TJ maximum  
0.94  
1.08  
V
Low level value of on-state  
slope resistance  
rt1  
(16.7 % x π x IT(AV) < I < π x IT(AV)), TJ = TJ maximum  
4.08  
mΩ  
High level value of on-state  
slope resistance  
rt2  
VTM  
IH  
(π x IT(AV) < I < 20 x π x IT(AV)), TJ = TJ maximum  
3.34  
1.60  
200  
400  
Maximum on-state voltage  
Maximum holding current  
Latching current  
Ipk = 157 A, TJ = 25 °C  
V
TJ = 25 °C, anode supply 22 V, resistive load,  
initial IT = 2 A  
mA  
IL  
Anode supply 6 V, resistive load  
www.vishay.com  
2
For technical questions, contact: ind-modules@vishay.com  
Document Number: 93711  
Revision: 19-Sep-08  

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