Datasheet > 50N06G-TND-R

50N06G-TND-R

更新时间： 2024-12-02 01:01:31

品牌	Logo	应用领域
友顺 - UTC		/
页数	文件大小	规格书
8页	345K
描述
50 Amps, 60 Volts N-CHANNEL POWER MOSFET

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50N06G-TND-R 数据手册

UNISONIC TECHNOLOGIES CO., LTD

50N06

Power MOSFET

50 Amps, 60 Volts

N-CHANNEL POWER MOSFET

TO-263



DESCRIPTION

TO-251

The UTC 50N06 is three-terminal silicon device with current

conduction capability of about 50A, fast switching speed. Low

on-state resistance, breakdown voltage rating of 60V, and max

threshold voltages of 4 volt.

It is mainly suitable electronic ballast, and low power switching

mode power appliances.

TO-220

TO-252

TO-220F



FEATURES

* R_DS(ON)< 23mΩ@V_GS= 10 V

* Ultra low gate charge ( typical 30 nC )

* Low reverse transfer capacitance ( C_RSS= typical 80 pF )

* Fast switching capability

TO-252D

* 100% avalanche energy specified

* Improved dv/dt capability



SYMBOL

2.Drain

1.Gate

3.Source



ORDERING INFORMATION

Ordering Number

Pin Assignment

Package

Packing

Lead Free

Halogen Free

50N06L-TA3-T

50N06L-TF3-T

50N60L-TM3-T

50N06L-TN3-T

50N06L-TN3-R

50N60L-TND-T

50N06L-TND-R

50N06L-TQ2-T

50N06L-TQ2-R

50N06G-TA3-T

50N06G-TF3-T

50N60G-TM3-T

50N06G-TN3-T

50N06G-TN3-R

50N60G-TND-T

50N06G-TND-R

50N06G-TQ2-T

50N06G-TQ2-R

TO-220

TO-220F

TO-251

TO-252

TO-252D

TO-263

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Note: Pin Assignment: G: Gate D: Drain S: Source

www.unisonic.com.tw

1 of 8

QW-R502-088.G

12 3 4 5 6 7 8

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