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50N60 PDF预览

50N60

更新时间: 2023-12-06 20:10:11
品牌 Logo 应用领域
鲁光 - LGE 晶体管场效应晶体管
页数 文件大小 规格书
2页 777K
描述
场效应晶体管

50N60 数据手册

 浏览型号50N60的Datasheet PDF文件第2页 
5 0 N 6 0  
50A,60V N-Channel Power Mosfet  
FEATURES  
RDS(ON) =17m@ VGS = 10V,ID=20A  
High Current Capacity : ID=50A  
Low reverse current.  
TO-220AB  
MAXIMUM RATING @ Ta=25unless otherwise specified  
Symbol  
Parameter  
Value  
60  
Units  
VDSS  
Drain-Source voltage  
V
V
±20  
VGSS  
Gate -Source voltage  
ID  
50  
A
Continuous Drain Current  
Power Dissipation  
PD  
2
W
TJ  
150  
Junction Temperature  
TOPR, Tstg  
Operating and Storage Temperature  
-55 to +150  
http://www.lgesemi.com  
mail:lge@lgesemi.com  
Revision:20170701-P1  

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