Datasheet > 50N02-09

50N02-09

更新时间： 2024-11-30 21:53:19

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
4页	53K
描述
N-Channel 20-V (D-S) 175 Degree Celcious MOSFET

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50N02-09 数据手册

SUD50N02-09P

Vishay Siliconix

N-Channel 20-V (D-S) 175_C MOSFET

FEATURES

PRODUCT SUMMARY

D TrenchFETr Power MOSFET

D 175_C Junction Temperature

D PWM Optimized for High Efficiency

D 100% R_gTested

V_DS(V)

r_DS(on)(W)

I_D(A)^a

0.0095 @ V = 10 V

APPLICATIONS

0.017 @ V = 4.5 V

D High-Side Synchronous Buck DC/DC

Conversion

− Desktop

− Server

TO-252

Drain Connected to Tab

Top View

N-Channel MOSFET

Ordering Information: SUD50N02-09P

SUD50N02-09P—E3 (Lead Free)

ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)

Parameter

Symbol

Limit

Unit

Drain-Source Voltage

Gate-Source Voltage

"20

= 25_C

Continuous Drain Current

T = 100_C

Pulsed Drain Current

100

4.3

Continuous Source Current (Diode Conduction)

Avalanche Current

L = 0.1 mH

Single Pulse Avalanche Energy

= 25_C

6.5

Maximum Power Dissipation

39.5

Operating Junction and Storage Temperature Range

T , T

−55 to 175

stg

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typical

Maximum

Unit

t v 10 sec

Maximum Junction-to-Ambient

thJA

thJC

Steady State

_C/W

Maximum Junction-to-Case

3.1

3.8

Notes

a. Surface Mounted on FR4 Board, t v 10 sec.

b. Limited by package

Document Number: 72034

S-41168—Rev. C, 14-Jun-04

www.vishay.com

12 3 4

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