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50L6P43 PDF预览

50L6P43

更新时间: 2024-11-18 19:54:35
品牌 Logo 应用领域
东芝 - TOSHIBA 局域网二极管
页数 文件大小 规格书
1页 18K
描述
DIODE 3 PHASE, 50 A, 800 V, SILICON, BRIDGE RECTIFIER DIODE, Bridge Rectifier Diode

50L6P43 技术参数

生命周期:Active包装说明:R-PUFM-D5
Reach Compliance Code:unknownHTS代码:8541.10.00.80
风险等级:5.75其他特性:LEAKAGE CURRENT IS NOT AT 25 DEG C
配置:BRIDGE, 6 ELEMENTS二极管元件材料:SILICON
二极管类型:BRIDGE RECTIFIER DIODE最大正向电压 (VF):1.2 V
JESD-30 代码:R-PUFM-D5最大非重复峰值正向电流:660 A
元件数量:6相数:3
端子数量:5最高工作温度:150 °C
最低工作温度:-40 °C最大输出电流:50 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT认证状态:Not Qualified
最大重复峰值反向电压:800 V最大反向电流:0.005 µA
表面贴装:NO端子形式:SOLDER LUG
端子位置:UPPERBase Number Matches:1

50L6P43 数据手册

  

50L6P43 替代型号

型号 品牌 替代类型 描述 数据表
SKD60/08 SEMIKRON

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Power Bridge Rectifiers
MEB00806 POWEREX

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Three-Phase Diode Bridge Module (60 Amperes/800 Volts)
RM30TB-H MITSUBISHI

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MEDIUM POWER GENERAL USE INSULATED TYPE

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