Datasheet > 4PT08F-S

4PT08F-S

更新时间： 2024-11-13 11:44:35

品牌	Logo	应用领域
尼尔 - NELLSEMI		可控硅栅
页数	文件大小	规格书
6页	199K
描述
Sensitive gate SCRs, 4A

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4PT08F-S 数据手册

RoHS

4PT Series

SEMICONDUCTOR

Sensitive gate SCRs, 4A

Main Features

Symbol

Value

Unit

I_T(RMS)

V_DRM/V_RRM

I_GT

600 to 800

10 to 200

TO-251 (I-PAK)

TO-252 (D-PAK)

µA

(4PTxxF)

(4PTxxG)

DESCRIPTION

Thanks to highly sensitive triggering levels, the 4PT

series is suitable for all applications where the available

gate current is limited, such as motor control for hand

tools, kitchen aids, capacitive discharge ignitions,

overvoltage crowbar protection for low power supplies

among others.

TO-220AB (Non-lnsulated)

TO-220AB (lnsulated)

(4PTxxAI)

(4PTxxA)

(A2)

Available in through-hole or surface-mount packages,

they provide an optimized performance in a limited

space area.

(G)3

1(A1)

ABSOLUTE MAXIMUM RATINGS

TEST CONDITIONS

VALUE

UNIT

PARAMETER

SYMBOL

Tc=115°C

Tc=110°C

Tc=115°C

Tc=110°C

t = 20 ms

TO-251/TO-252/TO-220AB

RMS on-state current full sine wave

(180° conduction angle )

I_T(RMS)

TO-220AB insulated

TO-251/TO-252/TO-220AB

Average on-state current

(180° conduction angle)

I_T(AV)

2.5

TO-220AB insulated

F =50 Hz

Non repetitive surge peak on-state

I_TSM

current (full cycle, T initial = 25°C)

t = 16.7 ms

F =60 Hz

I²t Value for fusing

I²t

A²s

A/µs

t_p= 10 ms

4.5

Critical rate of rise of on-state current

I_G= 2xl_GT, t_r≤100ns

F = 60 Hz

dI/dt

T_j= 125ºC

I_GM

P_G(AV)

V_DRM

V_RRM

T_stg

Peak gate current

T_p= 20 µs

T_j=125ºC

1.2

0.2

Average gate power dissipation

Repetitive peak off-state voltage

600 and 800

T_j=125ºC

Repetitive peak reverse voltage

Storage temperature range

- 40 to + 150

- 40 to + 125

ºC

T_j

Operating junction temperature range

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