Datasheet > 4N60G-TQ3-T

4N60G-TQ3-T

更新时间： 2022-09-20 09:39:10

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友顺 - UTC		/
页数	文件大小	规格书
8页	371K
描述
4A, 600V N-CHANNEL POWER MOSFET

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4N60G-TQ3-T 数据手册

4N60

Power MOSFET

ELECTRICAL CHARACTERISTICS (T_C=25°С, unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

Drain-Source Leakage Current

BV_DSS

I_DSS

V_GS= 0V, I_D= 250μA

V_DS= 600V, V_GS= 0V

V_GS= 30V, V_DS= 0V

600

μA

Forward

Reverse

100 nA

-100 nA

V/°С

Gate-Source Leakage Current

I_GSS

V_GS= -30V, V_DS= 0V

I_D=250μA,Referenced to 25°C

△BV_DSS/△T_J

Breakdown Voltage Temperature Coefficient

ON CHARACTERISTICS

Gate Threshold Voltage

Static Drain-Source On-State Resistance

DYNAMIC CHARACTERISTICS

Input Capacitance

0.6

V_GS(TH)

R_DS(ON)

V_DS= V_GS, I_D= 250μA

2.0

4.0

2.2 2.5

V_GS= 10 V, I_D= 2.2A

Ω

C_ISS

C_OSS

C_RSS

520 670 pF

V_DS= 25V, V_GS= 0V,

f = 1MHz

Output Capacitance

Reverse Transfer Capacitance

SWITCHING CHARACTERISTICS

Turn-On Delay Time

t_D(ON)

t_R

t_D(OFF)

t_F

Turn-On Rise Time

45 100 ns

V_DD= 300V, I_D= 4.0A,

R_G= 25Ω (Note 1, 2)

Turn-Off Delay Time

Turn-Off Fall Time

Total Gate Charge

Q_G

V_DS= 480V,I_D= 4.0A,

Gate-Source Charge

Q_GS

Q_GD

3.4

7.1

V_GS= 10V (Note 1, 2)

Gate-Drain Charge

SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS

Drain-Source Diode Forward Voltage

Maximum Continuous Drain-Source Diode

Forward Current

V_SD

V_GS= 0V, I_S= 4.4A

1.4

4.4

I_S

Maximum Pulsed Drain-Source Diode

Forward Current

I_SM

17.6

Reverse Recovery Time

t_rr

250

1.5

_GS= 0 V, I_S= 4.4A,

dI_F/dt = 100 A/μs (Note 1)

Reverse Recovery Charge

Q_RR

μC

Notes: 1. Pulse Test: Pulse width≤300μs, Duty cycle≤2%

2. Essentially independent of operating temperature

UNISONIC TECHNOLOGIES CO., LTD

3 of 8

QW-R502-061,Q

www.unisonic.com.tw

1 234 5 6 7 8

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