Datasheet > 4N60G-TF1-T

4N60G-TF1-T

更新时间： 2022-09-20 09:39:10

品牌	Logo	应用领域
友顺 - UTC		/
页数	文件大小	规格书
8页	371K
描述
4A, 600V N-CHANNEL POWER MOSFET

阅读下载

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

4N60G-TF1-T 数据手册

4N60

Power MOSFET

ABSOLUTE MAXIMUM RATINGS (T_C= 25°С, unless otherwise specified)

PARAMETER

SYMBOL

V_DSS

V_GSS

I_AR

RATINGS

600

UNIT

Drain-Source Voltage

Gate-Source Voltage

±30

Avalanche Current (Note 2)

4.4

Continuous

Pulsed (Note 2)

I_D

4.0

Drain Current

I_DM

4N60

260

V/ns

Single Pulsed

(Note 3)

E_AS

Avalanche Energy

4N60-E

200

Repetitive (Note 2)

Peak Diode Recovery dv/dt (Note 4)

TO-220/TO-262/TO-263

E_AR

10.6

4.5

dv/dt

106

TO-220F/TO-220F1

TO-220F2

Power Dissipation

P_D

TO-251/ TO-252

Junction Temperature

Operating Temperature

Storage Temperature

T_J

+150

-55 ~ +150

°С

T_OPR

T_STG

Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

2. Repetitive Rating : Pulse width limited by maximum junction temperature

3. L = 30mH, I_AS= 4A, V_DD= 50V, R_G= 25 Ω, Starting T_J= 25°C

4. I_SD≤4.4A, di/dt ≤200A/μs, V_DD≤BV_DSS, Starting T_J= 25°C

THERMAL DATA

PARAMETER

PACKAGE

SYMBOL

RATINGS

62.5

UNIT

TO-220/TO-262/TO-263

TO-220F/TO-220F1

TO-220F2

Junction to Ambient

Junction to Case

θ_JA

°С/W

TO-251/ TO-252

TO-220/TO-262/TO-263

TO-220F/TO-220F1

TO-220F2

1.18

3.47

3.28

2.5

θ_Jc

°С/W

TO-251/ TO-252

UNISONIC TECHNOLOGIES CO., LTD

2 of 8

QW-R502-061,Q

www.unisonic.com.tw

123 4 5 6 7 8

下载PDF

与4N60G-TF1-T相关器件

型号	品牌	描述	获取价格	数据表
4N60G-TF2-T	UTC	4A, 600V N-CHANNEL POWER MOSFET	获取价格
4N60G-TF3-T	UTC	4A, 600V N-CHANNEL POWER MOSFET	获取价格
4N60G-TF3T-T	UTC	N-CHANNEL JUNCTIN SILICON FET	获取价格
4N60G-TM3-T	UTC	4A, 600V N-CHANNEL POWER MOSFET	获取价格
4N60G-TMS2-T	UTC	N-CHANNEL POWER MOSFET	获取价格
4N60G-TMS4-T	UTC	N-CHANNEL POWER MOSFET	获取价格