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4N60G-S-TQ2-R PDF预览

4N60G-S-TQ2-R

更新时间: 2024-11-28 21:07:19
品牌 Logo 应用领域
友顺 - UTC /
页数 文件大小 规格书
7页 230K
描述
Power Field-Effect Transistor,

4N60G-S-TQ2-R 技术参数

是否Rohs认证: 符合生命周期:Active
Reach Compliance Code:compliant风险等级:5.56
峰值回流温度(摄氏度):NOT SPECIFIED处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

4N60G-S-TQ2-R 数据手册

 浏览型号4N60G-S-TQ2-R的Datasheet PDF文件第2页浏览型号4N60G-S-TQ2-R的Datasheet PDF文件第3页浏览型号4N60G-S-TQ2-R的Datasheet PDF文件第4页浏览型号4N60G-S-TQ2-R的Datasheet PDF文件第5页浏览型号4N60G-S-TQ2-R的Datasheet PDF文件第6页浏览型号4N60G-S-TQ2-R的Datasheet PDF文件第7页 
UNISONIC TECHNOLOGIES CO., LTD  
4N60-S  
Power MOSFET  
4A, 600V N-CHANNEL  
POWER MOSFET  
DESCRIPTION  
The UTC 4N60-S is a high voltage power MOSFET and is  
designed to have better characteristics, such as fast switching  
time, low gate charge, low on-state resistance and have a high  
rugged avalanche characteristics. This power MOSFET is  
usually used at high speed switching applications in power  
supplies, PWM motor controls, high efficient DC to DC  
converters and bridge circuits.  
FEATURES  
* RDS(ON) < 2.5@ VGS=10 V, ID=2.2A  
* Fast Switching Capability  
* Avalanche Energy Specified  
* Improved dv/dt Capability, high RuggednessA  
SYMBOL  
www.unisonic.com.tw  
1 of 7  
Copyright © 2015 Unisonic Technologies Co., Ltd  
QW-R502-973.D  

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