4N38S

更新时间： 2024-11-20 21:53:31

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		晶体光电晶体管光电晶体管高压
页数	文件大小	规格书
8页	381K
描述
HIGH VOLTAGE PHOTOTRANSISTOR OPTOCOUPLERS

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中文翻译

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数据手册

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4N38S 数据手册

HIGH VOLTAGE

PHOTOTRANSISTOR OPTOCOUPLERS

H11D1

H11D2

H11D3

H11D4

4N38

DESCRIPTION

The H11DX and 4N38 are phototransistor-type optically coupled optoisolators. An infrared emitting

diode manufactured from specially grown gallium arsenide is selectively coupled with a high voltage

NPN silicon phototransistor. The device is supplied in a standard plastic six-pin dual-in-line package.

FEATURES

• High Voltage

- H11D1, H11D2, BV_CER= 300 V

- H11D3, H11D4, BV_CER= 200 V

• High isolation voltage

- 5300 VAC RMS - 1 minute

- 7500 VAC PEAK - 1 minute

• Underwriters Laboratory (UL) recognized File# E90700

ANODE

CATHODE

N/C

BASE

COLLECTOR

EMITTER

APPLICATIONS

• Power supply regulators

• Digital logic inputs

• Microprocessor inputs

• Appliance sensor systems

• Industrial controls

ABSOLUTE MAXIMUM RATINGS

Parameter

Symbol

Value

Units

TOTAL DEVICE

T_STG

-55 to +150

°C

Storage Temperature

Operating Temperature

Lead Solder Temperature

Total Device Power Dissipation @ T_A= 25°C

Derate above 25°C

T_OPR

T_SOL

-55 to +100

260 for 10 sec

260

°C

P_D

I_F

3.5

mW/°C

EMITTER

*Forward DC Current

*Reverse Input Voltage

*Forward Current - Peak (1µs pulse, 300pps)

*LED Power Dissipation @ T_A= 25°C

Derate above 25°C

V_R

6.0

3.0

I_F(pk)

150

1.41

mW/°C

P_D

8/9/00

200046A

12 3 4 5 6 7 8

中文翻译

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4N38S1TA-V	EVERLIGHT	获取价格	6 PIN DIP PHOTOTRANSISTOR PHOTOCOUPLER
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