DATA SHEET
www.onsemi.com
6-Pin DIP High Voltage
Phototransistor
Optocouplers
6
1
PDIP6
CASE 646BY
4N38M, H11D1M, H11D3M,
MOC8204M
Description
6
6
The 4N38M, H11D1M, H11D3M and MOC8204M are
phototransistor−type optically coupled optoisolators. A gallium
arsenide infrared emitting diode is coupled with a high voltage NPN
silicon phototransistor. The device is supplied in a standard plastic
six−pin dual−in−line package.
1
1
PDIP6
CASE 646BX
PDIP6
CASE 646BZ
MARKING DIAGRAM
Features
• High Voltage:
ON
♦ MOC8204M, BV
= 400 V
H11D1
CEO
VXYYQ
♦ H11D1M, BV
♦ H11D3M, BV
= 300 V
= 200 V
CEO
CEO
• Safety and Regulatory Approvals:
♦ UL1577, 4,170 VAC for 1 Minute
• DIN−EN/IEC60747−5−5, 850 V Peak Working Insulation Voltage
ON
= Company Logo
H11D1 = Specific Device Code
V
RMS
= DIN EN/IEC60747−5−5 Option
(only appears on component ordered with
this option)
= One−Digit Year Code
= Digit Work Week
Applications
X
YY
Q
• Power Supply Regulators
• Digital Logic Inputs
• Microprocessor Inputs
• Appliance Sensor Systems
• Industrial Controls
= Assembly Package Code
ORDERING INFORMATION
See detailed ordering and shipping information on page 410
of this data sheet.
© Semiconductor Components Industries, LLC, 2022
1
Publication Order Number:
February, 2022 − Rev. 0
MOC8204M/D